This document describes the features and characteristics of the Toshiba Silicon N-Channel Junction Type Field Effect Transistor 2SK880, including its low frequency low noise amplification use, small package size, high gain, high voltage resistance, ultra-low noise, and high impedance.
The Toshiba 2SK880 is a low‑noise, high‑gain silicon N‑channel junction field‑effect transistor offered in a compact SC‑70 package. The datasheet provides absolute maximum ratings, typical electrical parameters, and recommended operating conditions.
Key information includes voltage limits, current capabilities, noise figure, and thermal specifications, along with handling guidelines to ensure reliable performance in low‑frequency, low‑noise amplification applications. This manual is written in Japanese.
| Gate‑Drain breakdown voltage (Vgd) | -50 V |
|---|---|
| Power dissipation (Pp) | 100 mW |
| Operating temperature range (Ta) | -55 °C to 125 °C |
| Package type | JEITA SC‑70 |
| Noise figure (NF) | 1.0 dB |
| Mass | 0.006 g |
The maximum gate‑drain voltage is –50 V.
It is rated for operation from –55 °C to 125 °C.
The typical noise figure is 1.0 dB.
It is supplied in a JEITA SC‑70 surface‑mount package.