Industrial

The TP2510N8 is a N-channel DMOS power transistor from Supertex with a low threshold and high input impedance. It uses a vertical DMOS structure and Supertex's proven silicon gate manufacturing process.

The document describes the features and characteristics of the TOP242-250 TOPSwitch-GX family, including extended power range, no heatsink required, integrated soft-start, programmable current limit, etc.

This document is a data manual for TMS320R2811 and TMS320R2812 Digital Signal Processors, providing information on the features and characteristics of these products.

The TLV7211 and TLV7211A are micropower CMOS comparators ideal for space- and weight-critical designs. They feature the SOT-23-5 package, small input offset voltage, and fast response time, making them suitable for small portable electronic devices such as mobile phones and notebook computers.

The TLP763J is a photocoupler produced by Toshiba. It uses a GaAs infrared LED optically coupled to a zero-voltage crossing turn-on photo-triac in a 6-lead plastic DIP. The product features include peak off-state voltage 600V (min.), trigger LED current 10mA (max.), on-state current 100mA (max.), isolation voltage 4000Vrms (min.), and UL, BSI, SEMKO and VDE certification.

VISHAY TLMK / O / S / Y330 is a power SMD LED utilizing (AS) AlInGaP technology with a rated current of 50 mA. It is available in red, green and orange with luminous intensity of 200 - 1250 mcd per packing unit. The product is suitable for traffic signals and signs, interior and exterior lighting, dashboard illumination, indicator and backlighting purposes for audio, video, LCD switches, symbols, illuminated advertising etc.

TLE 4296 GV30, GV33, GV50 is a monolithic integrated low drop voltage regulator with three versions of 3.0 V, 3.3 V, 5.0 V, output voltage tolerance ≤ ±4%, output current 30 mA, inhibit input, low quiescent current consumption, wide operating range up to 45 V, wide temperature range -40 °C ≤ Tj ≤ 150 °C, output protected against short circuit, overtemperature protection, reverse polarity proof.

The TLE214x and TLE214xA devices are high-performance, internally compensated operational amplifiers built using Texas Instruments complementary bipolar Excalibur process. The TLE214xA is a tighter offset voltage grade of the TLE214x. Both are pin-compatible upgrades to standard industry products. The design incorporates an input stage that simultaneously achieves low audio-band noise of 10.5 nV/√Hz with a 10-Hz 1/f corner and symmetrical 40-V/µs slew rate typically with loads up to 800 pF. The resulting low distortion and high power bandwidth are important in high-fidelity audio applications. A fast settling time of 340 ns to 0.1% of a 10-V step with a 2-kΩ/100-pF load is useful in fast actuator/positioning drivers. Under similar test conditions, settling time to 0.01% is 400 ns. The devices are stable with capacitive loads up to 10 nF, although the 6-MHz bandwidth decreases to 1.8 MHz at

tl082 is a high-speed j–fet input dual operational amplifier with high input impedance, high open-loop gain, low input bias current, low input offset voltage and high short-circuit current protection.

This document is the dimension table of ITT Cannon filter models. It lists the sizes, connection methods, capacitance values, and plating methods of each model.

The AO4916 is a dual N-channel enhancement mode MOSFET from ON Semiconductor with a maximum channel voltage of 30V and a maximum drain current of 8.5A. The device uses advanced trench technology to provide excellent R DS(ON) and low gate charge, and is suitable for use in DC-DC converters.

AO4918 is a dual N-channel enhancement mode field effect transistor from AOS. It features a low RDS(ON) and a low gate charge. The transistor can be used in DC-DC converters with a Schottky diode packaged in parallel with the synchronous MOSFET to further increase efficiency.

AO4914 is a dual N-channel enhancement mode field effect transistor with Schottky diode packaged together, used in DC-DC converters.