The TP2510N8 is a N-channel DMOS power transistor from Supertex with a low threshold and high input impedance. It uses a vertical DMOS structure and Supertex's proven silicon gate manufacturing process.
The Supertex TP2510 is a low‑threshold P‑channel enhancement‑mode vertical DMOS FET offered in a TO‑243AA (SOT‑89) package. It features low input capacitance, high input impedance, fast switching, and low on‑resistance, making it suitable for logic‑level interfaces, solid‑state relays, battery‑operated systems, photovoltaic drives, and general‑purpose line drivers.
The handbook provides ordering information, absolute maximum ratings, detailed electrical and thermal characteristics, switching waveforms, and typical performance curves. It also includes package options, recommended soldering temperature, and liability notices.
| Drain-to-Source Voltage (BVdss) | -100 V |
|---|---|
| Gate Threshold Voltage (Vgs(th)) | -1.0 to -2.4 V |
| On‑Resistance (R(on)) | 5.0‑7.0 Ω |
| Operating Temperature Range | -55 °C to +150 °C |
The TP2510 can withstand a drain‑to‑source voltage of up to -100 V.
A soldering temperature of 300 °C is recommended, keeping a 1.6 mm distance from the case for 10 seconds.
The device has a low threshold voltage of -2.4 V max.