Industrial

The 74HC/HCT563 is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT563 are octal D-type transparent latches featuring separate D-type inputs for each latch and inverting 3-state outputs for bus oriented applications. A latch enable (LE) input and an output enable (OE) input are common to all latches.

The IDT29FCT520AT/BT/CT/DT and IDT29FCT521AT/ BT/CT/DT each contain four 8-bit positive edge-triggered registers. These may be operated as a dual 2-level or as a single 4-level pipeline. A single 8-bit input is provided and any of the four registers is available at the 8-bit, 3-state output. These devices differ only in the way data is loaded into and between the registers in 2-level operation. The difference is illustrated in Figure 1. In the IDT29FCT520AT/BT/CT/DT when data is entered into the first level (I = 2 or I = 1), the existing data in the first level is moved to the second level. In the IDT29FCT521AT/BT/CT/DT, these instructions simply cause the data in the first level to be overwritten. Transfer of data to the second level is achieved using the 4-level shift instruction (I = 0). This transfer also causes the first level to change. In either part I=3 is for hold.

2SC1383, 2SC1384 are silicon NPN epitaxial planar type transistors for low-frequency power amplification and driver amplification.

2SC1360, 2SC1360A is a silicon NPN epitaxial planar type for intermadiate frequency amplification of TV image

2SC1359 is a NPN type transistor, with high frequency amplification characteristics, suitable for FM/AM radios and other scenes

2SC1345(K) is a NPN type transistor, which can be used in low frequency low noise amplifiers.

The 2SC1345(K) is a silicon NPN epitaxial transistor that is used in low frequency low noise amplifiers.

2SC1344 and 2SC1345 are silicon NPN epitaxial devices used for low frequency low noise amplifier applications. They have low noise figure and high gain bandwidth product.

2SC1342 is a silicon NPN epitaxial planar transistor primarily used for VHF amplifiers, mixers, and local oscillators.

This is a document about the 2SC1318A silicon NPN epitaxial planar transistor. It is suitable for the driver stage of a low-frequency amplifier, with a high collector to emitter voltage VCEO. It is also optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. The document also provides the absolute maximum ratings and electrical characteristics of the product.

The 2SC1252 is a high frequency power transistor produced by Infineon. The maximum operating frequency of this transistor can reach 500MHz. It has the characteristics of high gain, low noise, and low power consumption.

2SC1251 is an NPN silicon RF power transistor produced by Advanced Semiconductor Inc. It has a maximum current of 300mA, a maximum voltage of 45V, and a maximum power dissipation of 5.3W. The transistor has high linearity and high gain, and is often used in high-linearity Class A amplifiers below 2.0GHz.