This is a document about the 2SC1318A silicon NPN epitaxial planar transistor. It is suitable for the driver stage of a low-frequency amplifier, with a high collector to emitter voltage VCEO. It is also optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. The document also provides the absolute maximum ratings and electrical characteristics of the product.
This document is a technical datasheet for the Panasonic 2SC1318A, a Silicon NPN epitaxial planer type transistor designed for low-frequency driver amplification. It serves as a complementary component to the 2SA720A model.
The datasheet provides absolute maximum ratings and detailed electrical characteristics measured at Ta=25°C. Key parameters include collector cutoff current, transition frequency (fT), and various saturation voltages under specific test conditions.
| Type | Silicon NPN epitaxial planer type |
|---|---|
| Application | For low-frequency driver amplification |
| Complementary Model | 2SA720A |
It is designed specifically for low-frequency driver amplification.
The maximum rated collector power dissipation is 750 mW.