2SC1360, 2SC1360A is a silicon NPN epitaxial planar type for intermadiate frequency amplification of TV image
This document provides technical specifications and characteristics for the Panasonic 2SC1360 and 2SC1360A transistors. These are silicon NPN epitaxial planar type devices designed specifically for the intermediate frequency amplification of TV images.
The datasheet details absolute maximum ratings, electrical characteristics such as transition frequency and power gain, and includes graphical data regarding collector current versus voltage under various ambient temperatures.
| Transistor Type | Silicon NPN epitaxial planer type |
|---|---|
| Application | Intermediate frequency amplification of TV image |
| Collector Power Dissipation | 1 W |
| Junction Temperature | 150 °C |
| Package Type | TO-92L Package |
These silicon NPN epitaxial planar type transistors are designed for intermediate frequency amplification of TV images.
The absolute maximum collector power dissipation (Pc) for both models is rated at 1 W.
The absolute maximum junction temperature (Tj) is 150 °C.