This document is FDMS5352 N-Channel Power Trench® MOSFET's datasheet, it introduces its features and characteristics, including maximum voltage, maximum current, maximum on-state resistance, minimum on-state resistance, application scenarios, etc.
The FDMS5352 is an N-Channel Power Trench MOSFET produced using Fairchild Semiconductor's advanced process to minimize on-state resistance while maintaining superior switching performance. It is designed for applications such as DC-DC conversion and features an MSL1 robust package design with 100% UL tested reliability.
| Power Dissipation (Tc = 25°C) | 104 W |
|---|---|
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 1.2 °C/W |
The operating and storage junction temperature range is from -55 to +150 °C.
Yes, the device is RoHS compliant.