The FDMS6673BZ P-Channel PowerTrench® MOSFET is a high-performance device designed for use in load switch applications. It features an advanced package and silicon combination for low rDS(on), and an HBM ESD protection level of 8 kV typical.
The document describes the Fairchild Semiconductor FDMS6673BZ, an N-channel (P-Channel) PowerTrench MOSFET. It is engineered to minimize losses in load switch applications by combining advanced silicon and package technologies to achieve low on-resistance and high ESD protection.
Key specifications include a maximum drain-to-source voltage of -30 V and a continuous drain current of up to -28 A (package limited). The device features an HBM ESD protection level of 8 kV typical and is RoHS compliant. It is intended for use in notebook battery pack power management, server load switches, and similar applications.
| Drain to Source Voltage (Vdss) | -30 V |
|---|---|
| Continuous Drain Current (Package Limited) | -28 A |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 17 °C/W |
The continuous drain current is -28 A when package limited at a temperature of 25 °C.
It is designed for use as a load switch in notebooks and servers, specifically for notebook battery pack power management.
Yes, the document states that the device is RoHS Compliant.