This document describes the features and characteristics of the FDMS6681Z P-Channel PowerTrench® MOSFET product, released in May 2009, including maximum on-resistance, high ESD protection, etc.
The FDMS6681Z is a P-Channel PowerTrench MOSFET designed to minimize losses in load switch applications, such as notebook and server battery pack power management. It combines advanced silicon and package technologies to achieve a low on-resistance of 3.2 mΩ and high HBM ESD protection of 8kV typical.
The document provides comprehensive electrical characteristics, including off-state breakdown voltage, on-state resistance, switching times, and capacitance values. It also details thermal characteristics, package marking information, and dimensional outlines for the Power 56 package.
| Drain to Source Voltage | -30 V |
|---|---|
| Continuous Drain Current (Package limited) | -49 A |
| Continuous Drain Current (Silicon limited) | -116 A |
| On-Resistance (Typical) | 3.2 mΩ |
| Power Dissipation (Ta = 25°C) | 25 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| HBM ESD Protection Level | 8kV typical |
The maximum continuous drain current is -49 A when package limited at Te = 25°C.
It is designed for load switch applications in notebooks and servers, specifically for notebook battery pack power management.
The typical on-resistance is 3.2 mΩ at Vgs = -10 V and Id = -22.1 A.