The FDMS4435BZ is a P-channel MOSFET produced by Fairchild Semiconductor using its advanced Power Trench® process. It features extremely low on-state resistance and is well suited for power management and load switching applications common in notebook computers and portable battery packs.
This document is a technical datasheet for the Fairchild Semiconductor FDMS4435BZ, a P-Channel PowerTrench MOSFET. The device features an on-state resistance of 20 mΩ at Vgs = -10V and is designed for high power and current handling capabilities.
| Drain to Source Voltage (Vds) | -30 V |
|---|---|
| Continuous Drain Current (Package limited) | -18 A |
| Continuous Drain Current (Silicon limited) | -35 A |
| Power Dissipation (Ta = 25°C) | 39 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case (RθJC) | 3.2 °C/W |
The maximum continuous drain current is -18 A when the temperature is 25°C.
The maximum power dissipation is 39 W at a junction temperature of 25°C.
The operating and storage junction temperature range is from -55 to +150 °C.