Industrial

The RF3320 is a variable gain amplifier for use in CATV reverse path (upstream) applications. It is DOCSIS-com- pliant for use in cable modems. The gain control covers a 58dB range and is serially programmable via three-wire digital bus for compatibility with standard baseband chipsets. Amplifier shutdown and transmit disable modes are software- and hardware-controlled. The device is placed into software-shutdown mode via the serial control bus. The device operates over the frequency band of 5MHz to 65MHz for use in current U.S. and European systems. The amplifier delivers up to 60dBmV at the out- put of the balun. Gain is controllable in accurate 1dB steps. The device is provided in a thermally enhanced, exposed die flag package.

The RF3315 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 300MHz to 3GHz frequency range. The RF3315 operates from a single 5V power supply.

The RF3166 is a high-power, high-efficiency power ampli- fier module with integrated power control that provides over 50dB of control range. The device is a self-contained 6mmx6mm module with 50Ω input and output terminals. The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cel- lular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz and 1850MHz to 1910MHz bands.

The RF3164 3V 1900MHz Linear Power Amplifier Module is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA 2000 1X handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3164 has a digital control line for low power applications to lower quiescent current. The RF3164 is assembled in at 16-pin, 3mmx3mm, QFN package.

The RF3163 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA 2000 1X/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3163 has a digital control line for low power applications to lower quiescent current. The RF3163 is assembled in a 16-pin, 3mmx3mm, QFN package.

The RF3163 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld sys- tems.

The RF3160 is a high-power, high-efficiency power amplifier module from RF Micro Devices. It is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in GSM/DCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1785MHz bands.

The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control from RF Micro Devices. The module features 50Ω input and output terminals and is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz and 1850MHz to 1910MHz bands.

RF3140 is a high-power, high-efficiency power amplifier module with integrated power control for use in 3V quad-band GSM handsets. It incorporates a power control function and has 50Ω input and output terminals, making it possible to drive the module directly from the DAC output. The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz and 1850MHz to 1910MHz bands. The on-board power control function provides over 50dB of control range with an analog voltage input; and, power does not ramp down when the DAC output is turned off.

The RF3133 is a high-power, high-efficiency power amplifier module with integrated power control.

The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Hetero-junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spread- spectrum systems, and other applications in the 1750MHz to 1780MHz band.

The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3118 has a digital control line for low power application to reduce the current drain. The module is an ultra-small 6mmx6mm land grid array with backside ground.

The RF3117 is a 3V CDMA/AMPS cellular phone linear amplifier module that operates at 900MHz and has high power, high efficiency, and good linearity.

The RF3110 is a triple-band GSM/DCS/PCS power amplifier module with integrated power control. The integrated power control function eliminates the need for directional couplers, detector diodes, power control ASICs and other power control circuitry, allowing the module to be driven directly from the DAC output. The device is designed for use as the final RF amplifier in GSM/DCS and PCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz, 1710MHz to 1785MHz and 1850MHz to 1910MHz bands. On-board power control provides over 35dB of control range with an analog voltage input; and, power down with a logic “low” for standby operation.

RF 3 series ultra fast recovery diodes are silicon planar type Schottky diodes, used for high frequency rectification. Its features are very fast recovery, low forward voltage, low switching loss, standard package TO-220FN, CPD. Query RF1003T2D suppliers.