RF Micro Devices RF3315 Broadband High Linearity Amplifier Datasheet

The RF3315 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 300MHz to 3GHz frequency range. The RF3315 operates from a single 5V power supply.

Brand: RF Micro Devices
Category: amplifier
Document type: Datasheet
Language: English
Pages: 12
File format: PDF
File size: 227 KB
Published: 06 August, 2012
Updated: 28 September, 2023
MD5 checksum: 5AEFC7D2C09773118C3A27D9CA202E12
PDF: RF Micro Devices RF3315 Broadband High Linearity Amplifier Datasheet PDF

About this manual

The RF3315 is a high-efficiency Gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) amplifier designed for use in basestation applications, cellular and PCS systems, and WLL/W-CDMA systems. It operates from a single 5V power supply and covers the frequency range of 300 MHz to 3 GHz.

What's inside

Product Description
Features
Ordering Information
Absolute Maximum Ratings
AC Specifications
DC Specifications
Pin Function Description
Typical Application Schematic
PCB Design Requirements

Specifications

Frequency Range	300 MHz to 3 GHz
Output IP3 (Typical)	+40 dBm
Gain at 2.0GHz	12.5 dB
P1dB (Typical)	+23 dBm
Noise Figure at 2.0GHz	3.0 dB
Operating Voltage	5V

Frequently asked questions

What is the typical noise figure at 2.0GHz?

The typical noise figure is 3.0 dB.

What power supply voltage does the RF3315 require?

It operates from a single 5V power supply.

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