RF Micro Devices RF3120 Preliminary Datasheet

The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Hetero-junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spread- spectrum systems, and other applications in the 1750MHz to 1780MHz band.

Brand: RF Micro Devices
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 6
File format: PDF
File size: 62 KB
Published: 06 August, 2012
Updated: 30 September, 2023
MD5 checksum: 87E64012A0EECBD8C30223D37F8A2A5A
PDF: RF Micro Devices RF3120 Preliminary Datasheet PDF

About this manual

The RF3120 is a high-power, high-efficiency linear amplifier IC manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It is designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment and spread-spectrum systems within the 1750MHz to 1780MHz band.

What's inside

Product Description
Typical Applications
Features
Ordering Information
Absolute Maximum Ratings
Electrical Specifications
Pin Function

Specifications

Frequency Range	1750 to 1780 MHz
Linear Gain	26 dB
Maximum Linear Output Power	29 dBm
Total Linear Efficiency	32 %
Power Supply Voltage	3.4 V
Quiescent Current	100 mA

Frequently asked questions

What is the typical application for this amplifier?

It targets 3V handheld systems such as CDMA Korean-PCS Handsets and Spread-Spectrum Systems.

What is the package style of the RF3120?

The module uses an ultra-small 6mmx6mm land grid array with backside ground.

Does the device have a digital bias control?

Yes, it has a digital bias control voltage for low current in standby mode.

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