The RF3160 is a high-power, high-efficiency power amplifier module from RF Micro Devices. It is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in GSM/DCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1785MHz bands.
The RF3160 is a high-power, high-efficiency power amplifier module manufactured by RF Micro Devices using an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It is designed as the final RF amplifier for GSM/DCS handheld digital cellular equipment and other applications operating in the 880MHz to 915MHz and 1710MHz to 1785MHz bands.
| Operating Frequency Range (GSM) | 880 to 915 MHz |
|---|---|
| Maximum Output Power (GSM) | +35.0 dBm |
| PAE Efficiency (GSM) | 55 % |
| Operating Frequency Range (DCS) | 1710 to 1785 MHz |
| Maximum Output Power (DCS) | +32.5 dBm |
| PAE Efficiency (DCS) | 50 % |
| Supply Voltage Range | 2.8 to 5.0 V |
| Package Size | 9mm x 11mm |
The device provides over 70dB of control range with an analog voltage input.
The module operates on a single supply voltage ranging from 2.8V to 5.0V.
Band selection is handled internally via a logic input that enables either GSM or DCS bands.