The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3118 has a digital control line for low power application to reduce the current drain. The module is an ultra-small 6mmx6mm land grid array with backside ground.
The RF3118 is a high-power, high-efficiency linear amplifier IC manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It is designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment and spread-spectrum systems within the 1850MHz to 1910MHz band.
| Frequency Range | 1850 to 1910 MHz |
|---|---|
| Linear Gain (High Power) | 27 dB typical |
| Maximum Linear Output Power | 29 dBm |
| Total Linear Efficiency | 34 % |
| Supply Voltage (RF off) | +8.0 Vdc |
The device operates in the 1850MHz to 1910MHz band.
The maximum linear output power is 29 dBm for CDMA modulation.
The module requires a single 3V supply.