Industrial

The DB-960-90W is a N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM/GPRS/EDGE base station applications. It has excellent thermal stability, operates in the frequency range of 925-960 MHz, with a minimum output power of 90 W and a gain of 13 dB. The amplifier is sized at 80 mm x 50 mm x 10 mm.

This document introduces the DB-960-70W product, which is a N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM & E-GSM base station applications. The product features excellent thermal stability, common source configuration, a minimum output power of 70W and a gain of 13dB over the 925-960 MHz range, and a 10:1 load mismatch capability.

DB-960-60W is a high gain broadband power amplifier designed by European Telecommunications and ETSA. It is rated at 26V, with a maximum current of 8A and a maximum power dissipation of 95W. The maximum operating temperature is +85℃.

DB-915-12W is a common source N-channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM-R applications. It has high gain, broadband performance, operates at 12V, and can withstand load mismatch up to 10:1 with harmonics lower than 30dBc.

This document describes the features and performance of the DB-900-80W RF power amplifier. The device uses N-channel enhancement-mode lateral MOSFET technology and is suitable for IS-54/-136 and IS-95 base station applications. It has excellent thermal stability, operates in the frequency range of 869-894 MHz, with a maximum output power of 80W and a gain of 13dB. The device also has a 10:1 load VSWR capability and harmonics lower than 30dBc.

The DB-900-60W is a N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 and IS-95 base station applications. It features high gain and broadband performance, operating in common source mode at 26V, capable of withstanding 10:1 load mismatch and with harmonics lower than 30dBc.

The DB-900-100W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 & IS-95 base station applications. It has high gain and broadband performance, operates in common source mode at 26V, capable of withstanding load mismatch up to 10:1, and has harmonics lower than 30dBc.

The document describes an RF broadband power amplifier using 2x SD2933 N-channel enhancement-mode lateral MOSFETs. It has excellent thermal stability and operates over the frequency range of 1.6 to 54 MHz. The amplifier has a supply voltage of 48V, typical output power of 400W, and maximum input power of 10W. The efficiency is between 57% and 76%. The IMD at 300WPEP is less than -26dBc and the load mismatch is 3:1 for all phases.