Industrial

The RF3805 is a high-performance dual-stage amplifier specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this amplifier achieves high output power over a broad frequency range. The RF3805 amplifier also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surface-mount AlN package. Ease of integration is accomplished through the incorporation of an optimized evaluation board design provided to achieve proper 50Ω operation.

RF3800 GaAs HBT Pre-Driver Amplifier is a pre-driver for 450MHz base station amplifiers, with 6W output power, high linearity, 45% power added efficiency, thermally enhanced packaging, broadband platform design approach.

The product is a 450MHz base station pre-amplifier, using GaAs HBT process, with a 6W output power, 45% power-added efficiency, good linearity and thermal stability.

The RF3404 is a fully-functional, integrated dual-band downconverter module for tri-mode CDMA applications. The module, which uses SiGe technology, features two complete RF downconverters with low noise amplifiers, RF SAW filters, TX LO buffers, and RF matching for PCS and cellular band frequencies. Additionally, a divide-by-2 prescaler is integrated to allow the use of a single-band VCO. Multiple gain control options are available to conserve current and meet IS-98B specifications. The mixer design allows for a common IF filter for CDMA cellular and PCS operation, and a second output for the FM output. IF matching is external to the module.

This document describes the features and characteristics of the IRF340, an N-Channel power MOSFET. It has a rating of 10A, 400V, 0.550Ω on-state resistance, high single pulse avalanche energy rating, fast switching speeds, high input impedance, and is suitable for switching regulators, motor drivers, relay drivers, and other applications requiring high speed and low gate drive power.

RF3397 is a low-cost, general purpose RF amplifier IC from RF Micro Devices. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cas- cadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz.

The RF3394 is a general purpose, low-cost RF amplifier IC manufactured by RF Micro Devices on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It is designed for use as an easily-cas- cadable 50Ω gain block and is widely used in basestation, broadband, low-noise gain blocks, IF or RF buffer amplifiers, driver stage for power amplifiers, final PA for low-power applications and high reliability applications.

The RF3377 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC-biasing elements to operate as specified.

The RF3376 is a general purpose, low-cost RF amplifier IC from RF Micro Devices, Inc. It is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro- cess, and has been designed for use as an easily-cas- cadable 50Ω gain block. The device operates in frequency bands up to 6000MHz and features 22dB small signal gain, +2.0dB noise figure, and +11dBm output P1dB.

The RF3375 is a general purpose, low-cost RF amplifier IC from RF Micro Devices. It is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and designed for use as an easily-cascadable 50Ω gain block. It has a operating frequency range of DC to 6000MHz, 13.2dB small signal gain, +28dBm output IP3 and +16.0dBm output P1dB.

This document is the RF3330 datasheet. It introduces the characteristics of the product, including application scenarios, functions, and electrical performance.

The RF3322 is a variable gain amplifier for use in CATV reverse path (upstream) applications. It is DOCSIS-compliant for use in cable modems. The gain control covers a 58dB range and is serially programmable via three-wire digital bus for compatibility with standard baseband chipsets. Amplifier shutdown and transmit disable modes are software- and hardware-controlled. The device is placed into sleep mode via the serial control bus. The device operates over the frequency band of 5MHz to 65MHz for use in current U.S. and European systems. The amplifier delivers up to 60dBmV at the output of the balun. Gain is controllable in accurate 1dB steps. The device is provided in an industry-standard QSOP-20 package.

The RF3321 is a variable gain amplifier for use in CATV reverse path (upstream) applications. It is designed to be DOCSIS-compliant for use in cable modems. The gain control covers a 56dB range and is serially programmable via three-wire digital bus for compatibility with standard baseband chipsets. Amplifier shutdown and transmit disable modes are hardware-controlled. The device operates over the frequency band of 5MHz to 65MHz for use in current U.S. and European systems. The amplifier delivers up to +69dBmV at the output of the balun. Gain is controllable in accurate 1dB steps. The device is provided in a thermally enhanced, exposed die flag package.