Industrial

This document is the STEL-2176 User Manual, which provides product information for the STEL-2176 and is intended to help users understand the advantages of integrating both the receiver and transmitter functions as an integral portion of their cable modem chip.

The STE800P is a high-performance Octal Fast Ethernet physical layer interface for 10BASE-T and 100BASE-TX/FX applications. It was designed with advanced CMOS technology to provide an RMII/SMII for easy attachment to 10/100 Media Access Controllers (MAC) and a physical media interface for 100BASE-TX/FX of IEEE802.3u and 10BASE-T of IEEE802.3. The STE800P supports both half-duplex and full-duplex operation, at 10 and 100 Mbps operation. Its operating mode can be set using auto-negotiation, parallel detection, or manual control. It also allows for the support of auto-negotiation functions for speed and duplex detection.

The document introduces the N-channel power MOSFET product with MDmesh™ technology, which has low on-resistance, high dv/dt, and excellent avalanche characteristics. It is suitable for high voltage converters to increase power density, achieve system miniaturization, and improve efficiency.

STE70NM50 is a N-channel 500V, 0.045Ω, 70A ISOTOP Zener-Protected MDmesh™Power MOSFET from ST. It features an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics, improved ESD capability, low input capacitance and gate charge, low gate input resistance, tight process control, industry's lowest on-resistance.

STE53NC50 is an N-channel MOSFET from ISOTOP PowerMesh™II series with a maximum voltage of 500V, a typical RDS(on) of 0.07Ω, extremely high dv/dt capability, 100% avalanche tested, and is an ideal choice for high voltage applications.

STE53NA50 is a N-channel enhancement mode fast power MOS transistor produced by ST company. It has typical RDS(on) = 0.075 Ω, high current power module, isolated package, UL recognition, etc. The main applications are SMPS&UPS, motor control, welding equipment, PWM, and ultrasonic circuits.

The STE50DE100 is an ISOTOP power module that is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STE50DE100 is designed for use in industrial converters and/or welding equipment.

STE48NM60 is a N-channel MOSFET from ISOTOP. It features an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. It also has 100% AVALANCHE tested, low input capacitance and gate charge, low gate input resistance, tight process control and high manufacturing yields. The product is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

The STE45NK80ZD is a N-channel MOSFET from ST. Its features are RDS(on) typical value is 0.11 Ω, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability. This product is suitable for high current, high speed switching applications and is ideal for welding equipment.

This document describes the features and characteristics of the STE40NK90ZD N-CHANNEL 900V - 0.14Ω - 40 A ISOTOP Super FREDMesh™ MOSFET, including extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability. This product is suitable for high current, high-speed switching, and welding equipment.

This document describes the features and characteristics of STE40NC60 N-CHANNEL 600V - 0.098Ω - 40A ISOTOP PowerMesh™II MOSFET, including extremely high dv/dt capability, 100% avalanche tested, new high voltage benchmark, minimized gate charge, etc.

STE40NA60 is an N-channel enhancement mode fast power MOS transistor. It has a typical RDS(on) = 0.12 ohm, high current power module, extreme avalanche ruggedness, large SOA, large peak power capability, easy to mount, two source terminals with the same current capability, extremely low Rth(Junction to case), extremely low internal parasitic inductance and isolated package.