STE40NA60 is an N-channel enhancement mode fast power MOS transistor. It has a typical RDS(on) = 0.12 ohm, high current power module, extreme avalanche ruggedness, large SOA, large peak power capability, easy to mount, two source terminals with the same current capability, extremely low Rth(Junction to case), extremely low internal parasitic inductance and isolated package.
This document is a preliminary datasheet for the STE40NA60, an N-channel enhancement mode fast power MOS transistor manufactured by SGS-THOMSON Microelectronics. It highlights features such as avalanche rugged technology, very low internal parasitic inductance, and an isolated package recognized by UL. The device is designed for high current capability with the same rating for both source terminals and is suitable for applications including SMPS, UPS, motor control, and welding equipment.
The device is suitable for SMPS & UPS, motor control, welding equipment, and output stages for PWM and ultrasonic circuits.
Yes, it features an isolated package that is UL recognized.