The document introduces the N-channel power MOSFET product with MDmesh™ technology, which has low on-resistance, high dv/dt, and excellent avalanche characteristics. It is suitable for high voltage converters to increase power density, achieve system miniaturization, and improve efficiency.
The STE70NM60 is an N-channel 600V, 70A Power MOSFET utilizing STMicroelectronics' Isotop Zener-Protected MDmesh technology. This device features industry-leading low on-resistance of 0.050Ω, high dv/dt and avalanche capabilities, and improved ESD capability due to built-in back-to-back Zener diodes. It is designed for high-voltage converters to increase power density and allow system miniaturization.
| Drain-source Voltage | 600 V |
|---|---|
| Drain Current (continuous) at TC = 25°C | 70 A |
| Static Drain-source On Resistance | 0.050 Ω |
| Gate-Source Breakdown Voltage | 30 V |
| Total Dissipation at TC = 25°C | 600 W |
| Gate source ESD (HBM) | 6K V |
| Peak Diode Recovery voltage slope | 15 V/ns |
The typical on-resistance is 0.050Ω.
The maximum continuous drain current at 25°C is 70A.
No, the built-in back-to-back Zener diodes avoid the usage of external components.