STMicroelectronics STE40NK90ZD SuperFREDMesh MOSFET Datasheet

This document describes the features and characteristics of the STE40NK90ZD N-CHANNEL 900V - 0.14Ω - 40 A ISOTOP Super FREDMesh™ MOSFET, including extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability. This product is suitable for high current, high-speed switching, and welding equipment.


STMicroelectronics STE40NK90ZD SuperFREDMesh MOSFET Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
217 KB
Published
10 August, 2012
Updated
28 September, 2023
MD5 checksum
58B49EE40384D8FC95D591391617DD7A

About this manual

This document is a datasheet for the STE40NK90ZD, an N-channel SuperFREDMesh™ MOSFET manufactured by STMicroelectronics. The device features a 900V drain-source voltage rating, a typical on-resistance of 0.14Ω, and a continuous drain current of 40A. It is designed with an optimized PowerMESH™ layout to ensure high dv/dt capability and is specifically recommended for high-current, high-speed switching applications such as welding equipment.

What's inside

  • General Features
  • Absolute Maximum Ratings
  • Thermal Data
  • Avalanche Characteristics
  • Electrical Characteristics
  • Protection Features
  • Mechanical Data
  • Safe Operating Area

Specifications

Continuous Drain Current (25°C)40 A
Total Dissipation (25°C)600 W
Thermal Resistance Junction-case0.2 °C/W
Reverse Recovery Time930 ns

Frequently asked questions

What are the recommended applications for this MOSFET?

The device is ideal for high-current, high-speed switching applications, particularly welding equipment.

Does this MOSFET include built-in protection?

Yes, it includes built-in back-to-back Zener diodes to enhance ESD capability and absorb voltage transients from gate to source.

Is the device avalanche tested?

Yes, the device is 100% avalanche tested.

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