Industrial

The L6590 is a monolithic switching regulator designed in BCD OFF-LINE technology, able to operate with wide range input voltage and to deliver up to 15W output power. The internal power switch is a lateral power MOSFET with a typical RDS(on) of 13Ω and a V(BR)DSS of 700V minimum. The device can work with secondary feedback and a 2.5V±2% internal reference, in addition to a high gain error amplifier, makes possible also the implementation of other types of converters.

The L6574 is a high voltage driver chip for lamp ballasts, with features such as high voltage, immunity to high-speed voltage changes, and strong driving capability.

L6571A/B is a high voltage half bridge driver from STMicroelectronics. It can drive N-channel power MOSFETs and IGBTs. The oscillator is built-in and the frequency can be programmed using external resistor and capacitor. The internal logic assures a minimum dead time to avoid cross-conduction of the power devices.

L6569 is a high voltage half bridge driver with built-in oscillator from STMicroelectronics, with a maximum operating voltage of 600V, internal zener clamp between VS and VS, low start-up current of 150µA, programmable oscillator frequency, dead time of 1.25µs, dV/dt immunity up to ±50V/ns, ESD protection.

The L6567 is a monolithic high voltage integrated circuit designed by STMicroelectronics to drive CFL and small TL lamps with a minimum number of components. It provides all the necessary functions for proper preheating, ignition and steady state operation of the lamp, such as variable frequency oscillator, settable preheating and ignition time, capacitive mode protection, and lamp power independent from mains voltage variation. In addition to the control functions, the IC provides the level shift and drive function for two external power MOS FETs in a half-bridge topology.

The L6565 is a current-mode primary controller IC, specifically designed to build offline Quasi-resonant ZVS (Zero Voltage Switching at switch turn-on) fly-back converters. It features quasi-resonant operation, line voltage feedforward, pulse-by-pulse and hiccup-mode overcurrent protection, ultra-low start-up and quiescent current, disable function, and 1% precision internal reference voltage.

This document describes the features and characteristics of the L6562 PFC controller, including the use of BCD technology, transition-mode control of PFC pre-regulators, proprietary multiplier design for minimum THD of AC input current, very precise adjustable output overvoltage protection, ultra-low startup current and quiescent current, extended IC supply voltage range, on-chip filter on current sense, disable function, 1% internal reference voltage, -600/+800mA totem pole gate driver with UVLO pull-down and voltage clamp, and DIP-8/SO-8 packages. This product is suitable for PFC pre-regulators in IEC61000-3-2 compliant SMPS (TV, desktop PC, monitor) up to 300W, high-end AC-DC adapter/charger, and entry level server & web server applications.

L6561 is the improved version of the L6560 standard Power Factor Corrector. Fully compatible with the standard version, it has a superior performant multiplier making the device capable of working in wide input voltage range applications (from 85V to 265V) with an excellent THD. Furthermore the start up current has been reduced at few tens of µA and a disable function has been implemented on the ZCD pin, guaranteeing lower current consumption in stand by mode. Realised in mixed BCD technology,the chip gives the following benefits: micro power start up current, 1% precision internal reference voltage (Tj = 25°C), Soft Output Over Voltage Protection, no need for external low pass filter on the current sense, very low operating quiescent current minimises power dissipation. The totem pole output stage is capable of driving a Power MOS or IGBT with source and sink currents of +/- 400mA. The device is operating in transition mode and it is optimised for Electronic Lamp Ballast application, AC-DC adaptors and SMPS.

The L6560/A is a monolithic integrated circuit designed as a controller and driver of a discrete power MOS transistor for the implementation of active power factor correction, for sinusoidal line current consumption. The chip is realized in mixed BCD technology, and integrates: an undervoltage lockout with micropower start-up and hysteresis, an internal temperature compensated precise band gap reference, a stable error amplifier, one quadrant multiplier, current sense comparator, an output overvoltage protection circuit, and a totem-pole output stage able to drive a POWER MOS or IGBT devices with source and sink current of 400mA. The chip works in transition mode and is particularly intended for lamp ballast applications and for low power SMPS.

The HS-2520RH is a radiation hardened monolithic operational amplifier which delivers an unsurpassed combination of specifications for slew rate, bandwidth and settling time. This dielectrically isolated amplifier is designed for closed loop gains of 3 or greater without external compensation. In addition, this high performance component also provides low offset current and high input impedance.

The SMBD914/MMBD914 is a Schottky diode from ON Semiconductor. It features a high breakdown voltage and low reverse current, making it suitable for high-speed switching applications. The maximum rated reverse voltage is 100 volts and the maximum rated forward current is 250 milliamps.

SMBD7000/MMBD7000 is a silicon switching diode array for high-speed switching applications. It has a reverse voltage of 100V, peak reverse voltage of 100V, and forward current of 200mA.