STMicroelectronics STE53NA50 N-Channel Enhancement Mode Fast Power MOS Transistor Datasheet

STE53NA50 is a N-channel enhancement mode fast power MOS transistor produced by ST company. It has typical RDS(on) = 0.075 Ω, high current power module, isolated package, UL recognition, etc. The main applications are SMPS&UPS, motor control, welding equipment, PWM, and ultrasonic circuits.


STMicroelectronics STE53NA50 N-Channel Enhancement Mode Fast Power MOS Transistor Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
83 KB
Published
10 August, 2012
Updated
30 September, 2023
MD5 checksum
D1FA066769ECE3481E12D50CBFE50F08

About this manual

This document is a datasheet for the STE53NA50, an N-channel enhancement mode fast power MOS transistor manufactured by STMicroelectronics. The device features avalanche rugged technology and is designed for high current power modules with a continuous drain current of 53A at 25°C. It is suitable for applications such as SMPS, UPS, motor control, and welding equipment.

What's inside

  • Applications
  • Absolute Maximum Ratings
  • Thermal Data
  • Avalanche Characteristics
  • Electrical Characteristics
  • Dynamic Characteristics
  • Safe Operating Area
  • Mechanical Data

Frequently asked questions

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150 °C.

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