STMicroelectronics STE48NM60 N-Channel 600V MOSFET Datasheet

STE48NM60 is a N-channel MOSFET from ISOTOP. It features an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. It also has 100% AVALANCHE tested, low input capacitance and gate charge, low gate input resistance, tight process control and high manufacturing yields. The product is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.


STMicroelectronics STE48NM60 N-Channel 600V MOSFET Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
249 KB
Published
10 August, 2012
Updated
30 September, 2023
MD5 checksum
D703C0B90EA71C6DA26ED6E87A0310FD

About this manual

The STE48NM60 is an N-Channel 600V Power MOSFET utilizing STMicroelectronics' proprietary MDmesh™ technology. This device combines the Multiple Drain process with the PowerMESH™ horizontal layout to achieve outstanding low on-resistance and excellent avalanche characteristics. It is designed for high voltage converters where increasing power density and system miniaturization are required.

What's inside

  • Description
  • Applications
  • Absolute Maximum Ratings
  • Thermal Data
  • Avalanche Characteristics
  • Electrical Characteristics
  • Switching Characteristics
  • Source-Drain Diode
  • Safe Operating Area
  • Mechanical Data

Specifications

Drain Current (continuous) at Tc = 25°C48 A
Total Dissipation at Tc = 25°C450 W

Frequently asked questions

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150 °C.

Is the device avalanche tested?

Yes, the device is 100% avalanche tested.

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