MITSUBISHI Manuals

The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.

RA30H4452M is a 30-watt, 12.5-volt mobile radio RF power module from Silicon RF. It operates in the 440- to 520-MHz range.

RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to 520-MHz range.

The document describes the RA45H4045MR silicon RF power module, which is designed for 12.5V mobile radios operating in the 400-450MHz range. The module features enhancement-mode MOSFET transistors, with an output power greater than 45W, a wide frequency range, and the ability to support both linear and non-linear modulation.

The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. It features enhancement-mode MOSFET transistors, high output power, broad frequency range, low-power control current, and the ability for linear operation.

RA55H3340M is a 330-400MHz 55W 12.5V 3 Stage Amp. For MOBILE RADIO, this module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

RA55H3847M is a 55-watt RF power amplifier module for 12.5-volt mobile radios that operate in the 380- to 470-MHz range.

The RA55H4047M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. It features low-power control current, broadband frequency range, etc.

RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The module can be connected directly to the drain of the enhancement-mode MOSFET transistors and provides 60W of output power.

The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum). At VGG=5V, the typical gate currents are 5mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

This document describes the features and characteristics of the RA01L8693MA silicon RF power semiconductor, including its application, voltage requirements, and output power.

RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. It has enhancement-mode MOSFET transistors, output power and current increases as gate voltage increases. With a gate voltage around 0.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 1.5V (typical) and 2.0V (maximum). At VGG=2.0V, the typical gate current is 1mA.

This is the RA02M8087MD product manual. This product is a 34dBm output power RF MOSFET amplifier module for 7.2 volt portable radios that operate in the 806 to 869 MHz range.