MITSUBISHI Manuals - Manual Library

MITSUBISHI MGF0911A Manual

This document describes the high-power GaAs FET amplifier model MGF0911A. The product is designed for UHF band amplifiers and features high output power, high power gain, and high power added efficiency.

MITSUBISHI MGF0910A Manual

The MGF0910A is an N-channel schottky gate GaAs FET designed for use in UHF band amplifiers. It has high output power, high power gain, and high power added efficiency.

MITSUBISHI MGF0909A Manual

The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.

MITSUBISHI MGF0907B Manual

This document describes the MGF0907B high-power GaAs FET, which is used in UHF band power amplifiers. The product features high output power, high power gain, and high power added efficiency.

MITSUBISHI MGF4951A/4952A Manual

The MGF4951A/MGF4952A is a super-low noise HEMT (High Electron Mobility Transistor) designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.

MITSUBISHI MGF4961B Manual

The MGF4961B is a super-low noise GaAs FET from Mitsubishi Electric that is designed for use in K band amplifiers. Its features are low noise figure (f=20GHz, NFmin. = 0.7dB, typical) and high gain (f=20GHz, Gs = 13.5dB, typical).

MITSUBISHI MGF4953B Manual

The MGF4953B is a super-low noise InGaAs HEMT (High Electron Mobility Transistor) designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.

MITSUBISHI MGF4953A Manual

The MGF4953A is a super-low noise InGaAs HEMT designed for use in C to K band amplifiers. It features a low noise figure and high associated gain.

MITSUBISHI MGF4941AL Manual

MGF4941AL is a Mitsubishi product of GaAs HEMT low noise transistor, mainly used in Ku band amplifiers. Its features are low noise figure (NFmin. = 0.35dB) and high gain (Gs = 13.5dB).

MITSUBISHI MGF4935AM Manual

The MGF4935AM is a super-low noise InGaAs HEMT designed for use in S to Ku band amplifiers. It offers low noise figure and high associated gain.

MITSUBISHI MGF4934CM Manual

The document describes the features and characteristics of the MGF4934CM super-low noise InGaAs HEMT, which is designed for use in S to Ku band amplifiers. It offers low noise figure and high associated gain.

MITSUBISHI MGF4934BM Manual

MGF4934BM is a super-low noise InGaAs HEMT transistor designed for use in S to Ku band amplifiers. It is packaged in a 4pin flat lead package, offering a small-thin size and high cost performance.

MITSUBISHI MGF4931AM Manual

The MGF4931AM is a super-low noise InGaAs HEMT (High Electron Mobility Transistor) designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.

MITSUBISHI MGF1908A Manual

MITSUBISHI MGF1907A Manual

MGF1907A is a low noise GaAs FET from MITSUBISHI SEMICONDUCTOR