MITSUBISHI Manuals

MGFC41V3642 is a GaAs power FET designed for use in 3.6-4.2 GHz band amplifiers, featuring high output power, high power gain, and high power added efficiency.

The MGFC40V3742 is a high-performance device in the RF power amplifier. It has high output power, high power gain, high power added efficiency and low distortion characteristics, and is suitable for 3.7-4.2GHz frequency band power amplifiers and digital wireless communications applications.

MGFC39V7785A 7.7 – 8.5 GHz BAND / 8W is a GaAs power FET from Toshiba. It features high output power, high power gain and high power added efficiency, and is suitable for 7.7 - 8.5 GHz band power amplifiers and digital radio communications.

The MGFC39V7177A is an internally impedance-matched GaAs power FET designed for use in 7.1-7.7 GHz band amplifiers. It features class A operation, internal matching to a 50-ohm system, high output power P1dB=8W (typical) at 7.1-7.7 GHz, high power gain GLP=8.0dB (typical) at 7.1-7.7 GHz, high power added efficiency P.A.E.=28% (typical) at 7.1-7.7 GHz, and low distortion. It is suitable for power amplifiers and digital radio communication in the 7.1-7.7 GHz band.

MGFC39V6472A is an internally matched high-power GaAs FET designed for use in 6.4-7.2 GHz band amplifiers. It features high output power, high power gain, high power added efficiency, and low distortion.

The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

The MGFC39V5258 is an internally impedance-matched GaAs power FET designed for use in 5.2-5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC39V4450A 4.4 – 5.0 GHz BAND / 8W is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers

The MGFC39V3742A is an internally matched GaAs power FET designed for use in 3.7-4.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers.

The MGFC36V7785A is an internally matched GaAs power FET designed for use in 7.7-8.5 GHz band amplifiers. It features Class A operation, internal matching to a 50-ohm system, high output power, high power gain, high power added efficiency, and low distortion.

MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1-7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC36V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8-6.75GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.