MITSUBISHI Manuals

The M63832GP/KP 7-channel sinkdriver, consists of 7 PNP and 14 NPN transistors connected to from seven high current gain driver pairs.

m63830p/fp is a 4-channel sinkdriver produced by mitsubishi, which has high breakdown voltage, high current driving, 3v microcomputer series compatible input, clamping diodes, input diodes and wide operating temperature range.

M63828WP/DP are 7-unit 500mA Darlington transistor arrays with clamp diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

M63827WP/DP is a 7-circuit Darlington transistor array with clamping diode, which contains NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

M63826P/FP/GP is a 7-unit, 500mA, clamping diode Darlington transistor array. The devices are made of NPN transistors and can provide high current drive with extremely low input current supply. In addition, this series of devices has been expanded with the addition of a 225mil (GP) package. M63826P and M63826FP have the same pin connection as M54526P and M54526FP (compatible with M54526P and M54526FP). In addition, the functions of M63826P and M63826FP are the same as or higher than those of M54526P and M54526FP.

M63824GP/KP is a 7-channel NPN transistor array that integrates 7 high current gain driver pairs. This product has high breakdown voltage (BVCEO ≥ 50V), high current drive (IC(max) = 500mA), built-in clamp diode, 3V microcomputer series compatible input and wide operating temperature range (Ta = –40 to +85°C). This product can be applied to the output of 3V microcomputer series and the interface with high voltage system.

M63823P, M63823FP, and M63823GP are seven-channel Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. These semiconductor integrated circuits have extremely low input current supply and high current driving capabilities. The production lineup has been expanded with the addition of the 225mil (GP) package. M63823P and M63823FP have the same pin connection as M54523P and M54523FP. The features of M63823P and M63823FP are equal or superior to those of M54523P and M54523FP.

The M63820FP/KP is an 8-channel sink driver consisting of 16 NPN transistors connected to form eight high current gain driver pairs. It features high breakdown voltage, high-current driving, clamping diodes, and compatibility with 3V microcomputer series inputs.

M63817P/FP/KP is a 8-channel 300mA single transistor array with clamping diode.

M63816P/FP/KP is an 8-unit 300mA transistor array with clamp diode, made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

M63815P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transis- tors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

The M63814P/FP/GP/KP is a 7-unit single transistor array with clamping diodes. The circuits are made of NPN transistors. The semiconductor integrated circuits per- form high-current driving with extremely low input-current supply.

M63813P/FP/GP/KP are seven-circuit single transistor arrays with clamping diodes. The circuits are made of NPN transistors and perform high-current driving with extremely low input-current supply. They feature four package configurations, medium breakdown voltage, synchronizing current, clamping diodes, low output saturation voltage, and wide operating temperature range. They are suitable for driving indication elements (LEDs and lamps) with small signals.

M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE is a 7-channel current driver produced by Mitsubishi Semiconductor. It has a strong current driving capability and can drive a maximum current of 300mA. The product has four package forms and is suitable for driving LEDs and lamps.

The M63807P/FP/KP is an eight-circuit single transistor array made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low input-current supply.