MITSUBISHI Manuals - Manual Library

MITSUBISHI MGF2415A Manual

MGF2415A is a GaAs FET with an N-channel Schottky gate, produced by Mitsubishi Electric Corporation. It is designed for use in S to Ku band amplifiers. Its features are: high output power, high linear power gain and high power added efficiency.

MITSUBISHI MGF2407A Manual

MGF2407A is a N-channel schottky gate high power GaAs FET designed for use in S to Ku band amplifiers. This device features high output power, high linear gain and high power added efficiency.

MITSUBISHI MGF1954A Manual

The MGF1954A is a power MES FET from Mitsubishi Electric that is designed for use in S to Ku band power amplifiers. This device has high gain and high P1dB, with typical values of 5.0dB and 23dBm, respectively. It is suitable for use in S to Ku band low noise amplifiers.

MITSUBISHI MGF1953A Manual

MGF1953A is a power MESFET designed by Mitsubishi Electric for use in S to Ku band power amplifiers.

MITSUBISHI MGF1952A Manual

MGF1952A is a microwave power MES FET device produced by Mitsubishi Electric. It is used in S to Ku band power amplifiers.

MITSUBISHI MGF1951A Manual

MITSUBISHI MGF1451A Manual

MGF1451A is a GaAs MESFET power device produced by Mitsubishi Electric. It has high gain and high P1dB characteristics and is suitable for S to Ku band low noise amplifiers.

MITSUBISHI MGF0953P Manual

MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched is MG brand's GaAs FET product, with high output power, high power gain and high power added efficiency, suitable for L/S band power amplifiers.

MITSUBISHI MGF0952P Manual

MITSUBISHI MGF0951P Manual

MGF0951P is an N-channel schottky gate GaAs FET designed for use L/S band amplifiers. Its features are high output power, high power gain and high power added efficiency.

MITSUBISHI MGF0921A Manual

MITSUBISHI MGF0920A Manual

The MGF0920A GaAs FET is a high-power, high-gain, high-efficiency N-channel Schottky Gate FET, suitable for UHF band power amplifiers.

MITSUBISHI MGF0918A Manual

The MGF0918A GaAs FET is a GaAs FET with an N-channel schottky Gate, designed for use UHF band amplifiers. It has high output power, high power gain and high power added efficiency.

MITSUBISHI MGF0915A Manual

MGF0915A is an N-channel Schottky Gate GaAs FET, designed for use in UHF band amplifiers. Its features are high output power, high gain, and high power added efficiency.