Infineon manuals, page 2
Infineon IPP10N03L IPB10N03L Manual
IPB10N03L is a logic level N-channel low voltage switch device produced by Infineon, which has the characteristics of low on-resistance, excellent gate charge x on-resistance product (FOM), superior thermal resistance, 175°C operating temperature, avalanche rated, dv/dt rated, and is ideal for fast switching buck converters.
Infineon IPB14N03LA/IPI14N03LA/IPP14N03LA Guide(1)
This document describes the features of IPB09N03LA, IPI09N03LA, and IPP09N03LA OptiMOS®2 power transistors, including their suitability for high-frequency DC/DC converters, N-channel, logic level, excellent gate charge x RDS(on) product (FOM), very low on-resistance, superior thermal resistance, 175°C operating temperature, and dv/dt rating.
Infineon IPB08CN10N G IPI08CN10N G IPP08CN10N G Manual
The characteristics of IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS®2 power transistor include N-channel, normal level, excellent gate charge x R DS(on) product (FOM), very low on-resistance R DS(on), 175 °C operating temperature, lead-free lead plating; RoHS compliant, qualified according to JEDEC1) for target application, ideal for high-frequency switching and synchronous rectification.
Infineon IPP07N03L IPB07N03L Manual
This document describes the features and characteristics of the IPP07N03L and IPB07N03L OptiMOS Buck converter series products released on October 17, 2002. These products are N-channel logic level MOSFETs with low on-resistance, excellent gate charge x on-resistance product, superior thermal resistance, 175°C operating temperature, avalanche rated, and dv/dt rated. They are ideal for fast switching buck converters.
Infineon IPB05N03LA IPI05N03LA IPP05N03LA Manual
This document describes the features and characteristics of IPB05N03LA, IPI05N03LA, and IPP05N03LA OptiMOS®2 power transistors, including their suitability for high-frequency dc/dc converters, excellent gate charge x R DS(on) product, very low on-resistance, superior thermal resistance, and 175°C operating temperature.
Infineon IPP05N03L IPB05N03L Manual
This document provides technical parameters of IPP05N03L and IPB05N03L.
Infineon IPB04N03LA IPI04N03LA IPP04N03LA Manual
The IPB04N03LA is a N-channel power MOSFET from Infineon that features high-frequency dc/dc converters, logic level, very low on-resistance, excellent thermal resistance, etc.
Infineon IPP04N03L IPB04N03L Manual
This document introduces the features and characteristics of the two products IPP04N03L and IPB04N03L, including their maximum ratings, electrical characteristics, thermal characteristics, etc.
Infineon IPB03N03LA IPI03N03LA IPP03N03LA Manual
The document introduces three models of OptiMOS®2 power transistors: IPB03N03LA, IPI03N03LA, and IPP03N03LA. These transistors are ideal for high-frequency dc/dc converters and have excellent gate charge and on-resistance, as well as superior thermal resistance. They have an operating temperature of 175°C and are rated for reverse diode dv/dt. The document also provides parameter and package information for each model.
infineon BC817 BC818 handbook
BC817 and BC818 are NPN silicon AF transistors, suitable for general AF applications. They have high collector current, high current gain, and low collector-emitter saturation voltage. There are also complementary types BC807 and BC808 (PNP).
infineon BC817UPN handbook
BC817UPN is a NPN/PNP Silicon Transistor Array, for AF input stages and driver applications, with high current gain, low collector-emitter saturation voltage, and two (galvanic) internal isolated NPN/PNP Transistors in one package.
infineon BC817U handbook
BC817U is a NPN silicon transistor array designed for AF input stages and driver applications. It features high current gain, low collector-emitter saturation voltage, and two internally isolated transistors with good matching in one package.
Infineon BC817W/BC818W Manual
BC817W, BC818W are NPN silicon AF transistors for general AF applications. They have high collector current, high current gain, and low collector-emitter saturation voltage. The complementary types are BC807W, BC808W (PNP).
Infineon PNP Silicon AF Transistors BC807W BC808W handbook
BC807W, BC808W are Infineon PNP silicon AF transistors, used for general AF applications, with high collector current, high current gain, low collector-emitter saturation voltage.
Infineon PNP Silicon Transistor Array BC807U handbook
BC807U is a PNP Silicon Transistor Array for AF input stages and driver applications with high current gain, low collector-emitter saturation voltage and two (galvanic) internal isolated Transistors with good matching in one package