Infineon manuals, page 5
Infineon BAT 15-05W handbook
BAT 15-05W is a Schottky diode that can be used in DBS mixer applications up to 12 GHz. It features a low noise figure and low barrier type.
Infineon BAT 15-04W handbook
The data sheet mainly introduces the data information of BAT 15-04W, including maximum ratings, electrical characteristics, etc.
Infineon BAT 15-03W handbook
BAT 15-03W is a silicon Schottky diode produced by Texas Instruments (TI). This diode has low noise characteristics and can be used for DBS mixer applications. The maximum reverse voltage is 4V, the maximum forward current is 100mA, the rated power is 100mW, and the working temperature range is -55°C to 150°C. The storage temperature range is -55°C to 150°C
Infineon BAT 14-099R handbook
BAT 14-099R is a silicon crossover ring quad Schottky diode, suitable for applications such as double balanced mixers, phase detectors, and modulators. It has a medium barrier characteristic.
Infineon BAT 14-077S handbook
This document is a datasheet for the BAT 14-077S Silicon Single Flip Chip Schottky Diode. The diode is suitable for W-band applications up to 80 GHz. It is an electrostatic discharge sensitive device and requires handling precautions.
Infineon BAT 14-077D handbook
BAT 14-077D is a silicon dual flip chip Schottky diode produced by GaAs Components. This diode has medium barrier mixer diode characteristics and is suitable for W-band applications up to 80 GHz.
Infineon BAT 14-03W handbook
This document describes the features and characteristics of the BAT 14-03W silicon Schottky diode, including its applications, low noise figure, and maximum ratings.
infineon BFG 235 handbook
The BFG 235 is a NPN Silicon RF Transistor produced by Texas Instruments. It is used for low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA. It is also suitable for DECT and PCN systems power amplifiers. The BFG 235 has an integrated emitter ballast resistor and a fT of 5.5 GHz.
infineon BFG196 handbook
BFG196 is an NPN silicon RF transistor designed for low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz. It can operate at collector currents ranging from 20 mA to 80 mA. It is also suitable for power amplifiers in DECT and PCN systems. The transistor has a cutoff frequency of 7.5 GHz and a gain of 1.5 dB at 900 GHz. It is an electrostatic discharge sensitive device and requires careful handling.
infineon BFG 194 handbook
BFG 194 is a RF transistor, mainly used in low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA
infineon BFG193 handbook
BFG193 is a NPN silicon RF transistor, suitable for low noise, high gain amplifiers with frequencies up to 2 GHz.
infineon BFG 19S handbook
BFG 19S is a NPN silicon RF transistor, suitable for low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA.
Infineon BFG 135A Manual
BFG 135A is a RF transistor produced by Texas Instruments (TI). It has an integrated emitter ballast resistor and a maximum current of 150mA. Its maximum power is 1W and its maximum frequency is 2GHz.
Infineon BFQ19S handbook
BFQ19S is a NPN silicon RF transistor, used for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA.
infineon BF999 Silicon N-Channel MOSFET Triode handbook
BF999 is a N-channel MOSFET, suitable for high frequency applications such as FM applications.