Samsung manuals, page 41
SAMSUNG K5T6432YT(B)M handbook(1)(1)
The K5T6432YT(B)M is a Multi Chip Package Memory that combines 64Mbit Four Bank Flash and 32Mbit UtRAM.
samsung K5P2880YCM - T085 handbook(1)
This document introduces the multi-chip package memory product of K5P2880YCM - T085 model from Dinghao. The product combines 128Mbit (16Mx8) Nand Flash Memory and 8Mbit (1Mx8/512Kx16) Full CMOS SRAM. The flash memory has fast programming and erasing performance, while the SRAM has high capacity and low power consumption.
samsung K5P2880YCM - T085 handbook
K5P2880YCM is a Multi ChipPackage Memory integrating 128Mbit Nand Flash and 8Mbit full CMOS SRAM produced by Samsung. It features single 3.0V power supply and supports 528-byte page program, 16K-byte block erase with 50ns reading speed.
samsung K5L5628JT(B)M handbook(1)(1)
K5L5628JT(B)M is a 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM produced by Samsung Electronics. The operating voltage is 1.7V to 1.95V and the operating temperature is -30°C ~ 85°C.
samsung K5L5628JT(B)M handbook(1)
K5L5628JT(B)M is a 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM launched by Samsung
samsung K4S643232C handbook
This document describes the features and characteristics of the K4S643232C CMOS SDRAM product, including its storage capacity, operating voltage, operating frequency range, programmable latency, etc.
samsung K4S64163LH - R(B)E/N/G/C/L/F Manual
K4S64163LH-R(B)E/N/G/C/L/F is a mobile memory produced by Samsung. It uses high performance CMOS technology. It has 2.5V power supply, 4 banks operation, MRS cycle and EMRS cycle.
samsung K4S641633H - R(B)E/N/G/C/L/F Manual(1)
The K4S641633H is a synchronous high data rate dynamic random access memory (SDRAM) from Samsung that is organized as 4 x 1,048,576 words by 16 bits. The device is fabricated with Samsung's high-performance CMOS technology and features a synchronous design that allows precise cycle control with the use of system clock. The device also supports a wide range of operating frequencies, programmable burst lengths, and programmable latencies, making it suitable for a variety of high-bandwidth and high-performance memory system applications. The K4S641633H is available in commercial temperature (-25°C to 70°C) and extended temperature (-25°C to 85°C) versions. The device is packaged in a 54-ball FBGA with 0.8mm ball pitch and is available in both leaded (-RXXX) and lead-free (-BXXX) versions.
samsung K4S641633H - R(B)E/N/G/C/L/F Manual(1)(1)
The document describes the features and characteristics of the K4S641633H-R(B)E/N/G/C/L/F model mobile SDRAM product, including 3.0V and 3.3V power supply, LVCMOS compatibility, four banks operation, MRS and EMRS cycle, etc.
samsung K4S56163LF - X(Z)E/N/G/C/L/F Manual(1)
The document describes the features of the K4S56163LF mobile SDRAM product from Dinghao. The product operates at a 2.5V power supply and is LVCMOS compatible with multiplexed address. It supports four banks operation and features CAS latency, burst length, and burst type settings. The product also provides special function support such as Partial Array Self Refresh and Temperature Compensated Self Refresh. It is suitable for high bandwidth, high performance memory system applications.
samsung K4S56163LF - X(Z)E/N/G/C/L/F Manual(1)(1)
This document describes the features and characteristics of the K4S56163LF Mobile-SDRAM, including a 2.5V power supply, LVCMOS compatible multiplexed address, four banks operation, MRS cycle, EMRS cycle, and other functions.
samsung K4S56163PF - R(B)G/F Manual(1)
The K4S56163PF is a 268,435,456-bit synchronous high-data-rate dynamic random-access memory organized as 4 x 4,196,304 words by 16 bits, fabricated with Samsung's high-performance CMOS technology. Precise cycle control is allowed with the use of the system clock and I/O transactions are possible on every clock cycle due to the synchronous design. The same device can be used in a variety of high-bandwidth and high-performance memory system applications due to the range of operating frequencies, programmable burst lengths, and programmable latencies.
samsung K4S56163PF - R(B)G/F Manual(1)(1)
K4S56163PF is a low-power, high-performance synchronous dynamic random access memory (SDRAM) produced by Samsung. It uses 4 x 4,196,304 bytes x 16 bit high-performance CMOS technology and can work in the commercial temperature range of -25°C~70°C and the extended temperature range of -25°C~85°C.
SAMSUNG K4S561633F - X(Z)E/N/G/C/L/F
The K4S561633F is a 268,435,456-bit synchronous high data rate Dynamic Random Access Memory organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
samsung 16Mx16 SDRAM 54CSP CMOS SDRAM Manual
K4S561633C-R(B)L/N/P is a 4M x 16Bit x 4 Banks Synchronous DRAM launched by Samsung. It adopts 54CSP package and supports 3.0V/3.0V and 3.3V/3.3V two power supply voltages. The chip has four banks operation, MRS cycle, address key program, delay cycle, burst length and burst type functions, and supports auto refresh.