Samsung manuals, page 36
SAMSUNG K4S280432M handbook(1)(1)
The K4S280432M is a 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technol- ogy.
SAMSUNG K4S280432M handbook(1)
The K4S280432M CMOS SDRAM is 128Mbit SDRAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG's high performance CMOS technology.
SAMSUNG SDRAM 128Mb F-die (x4 x8 x16) handbook(2)
SAMSUNG SDRAM 128Mb F-die (x4 x8 x16) handbook(1)
This document is a preview version of SAMSUNG 128Mb F-die SDRAM Specification, which provides detailed information on the features and characteristics of the product
SAMSUNG SDRAM 128Mb F-die (x4 x8 x16)handbook
This document is a technical specification for K4S280432F/K4S280832F/K4S281632F, which introduces the features and characteristics of the product, including storage capacity, interface, package, etc.
SAMSUNG SDRAM 128Mb F-die (x4 x8 x16) handbook(1)(1)
128Mb F-die SDRAM Specification
samsung SCH-i929 Manual
This is a user manual for Samsung SCH-i929, which introduces the features and characteristics of the device.
samsung 128Mb E-die SDRAM Specification Manual
This document introduces three SDRAM products, namely K4S280432E, K4S280832E, and K4S281632E. They are synchronous high data rate Dynamic RAMs fabricated with Samsung's high performance CMOS technology. These products feature precise cycle control and programmable burst length and latencies, making them suitable for a variety of high bandwidth, high performance memory systems.
SAMSUNG K4S280432D handbook(1)
This document is about 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL. It describes the features and characteristics of the product in detail.
SAMSUNG K4S280432D handbook(1)(1)
The document describes the features and characteristics of CMOS SDRAM K4S280432D, including its storage capacity, structure, operating frequency, and power supply.
SAMSUNG K4S280432C handbook(1)
This document introduces the datasheet of K4S280432C CMOS SDRAM, including the product features, characteristics, parameters, etc.
SAMSUNG K4S280432C handbook(1)(1)
This document introduces the K4S280432C CMOS SDRAM product from Samsung Electronics. The product is a synchronous dynamic RAM with a high data rate, organized as 4 x 8,388,608 words by 4 bits, fabricated with Samsung's high-performance CMOS technology. It operates on a 3.3V power supply and is LVTTL compatible with multiplexed address. It supports four banks operation and features programmable burst length, CAS latency, and burst type.
SAMSUNG K4S280432B handbook(1)
This document describes the features and characteristics of the K4S280432B CMOS SDRAM product, including its organization, operating frequency range, programmable burst length, and latency. The product has high data transfer rate and high performance, making it suitable for various high bandwidth, high performance memory system applications.
SAMSUNG K4S280432B handbook(1)(1)
This document describes the features and characteristics of the K4S280432B CMOS SDRAM product released by Samsung Electronics in August 1999. The product is a synchronous high data rate dynamic random access memory with a capacity of 128Mbit, fabricated using Samsung's high-performance CMOS technology. It has programmable operating frequencies, burst lengths, and latencies, making it suitable for various high-bandwidth, high-performance memory system applications.
SAMSUNG K4S280432A handbook
K4S280432A is a 128Mbit SDRAM fabricated with SAMSUNG's high performance CMOS technology. It features synchronous design and programmable characteristics, making it suitable for high bandwidth, high performance memory system applications.