Samsung manuals, page 42
samsung K4S561633C-R(B)L/N/P 16Mx16 SDRAM 54CSP Manual
The K4S561633C-R(B)L/N/P is a synchronous dynamic random access memory (SDRAM) manufactured by Samsung. It has a storage capacity of 4M×16 bits×4 banks, a working voltage of 3.0V or 3.3V, and a working temperature range of -25°C to 85°C. The device has four bank operations, MRS cycle, CAS latency, burst length, burst type, self-refresh, and a 64ms refresh period.
samsung K4S51323LF - M(E)C/L/F Mobile SDRAM Manual
This document is the detailed information of K4S51323LF. It introduces the features and characteristics of the product in detail.
samsung K4S513233F - M(E)C/L/F Mobile SDRAM Manual(1)
K4S513233F - M(E)C/L/F is a mobile storage device produced by Samsung. It supports 3.0V and 3.3V power supply, LVCMOS compatible with multiplexed address, supports four banks operation, supports MRS cycle and address key programs.
samsung K4S513233F - M(E)C/L/F Mobile SDRAM Manual(1)(1)
This document introduces the features and characteristics of K4S513233F, including power supply voltage, interface compatibility, operating frequency, operating temperature, etc.
samsung K4S51163PF-Y(P)F Mobile-SDRAM Manual(1)
K4S51163PF-Y(P)F is a synchronous high data rate dynamic memory produced by Samsung. The organization is 4 x 8,388,608 words by 16 bits, with programmable burst lengths and programmable latencies, suitable for various high bandwidth and high performance memory system applications.
samsung K4S51163PF-Y(P)F Mobile-SDRAM Manual(1)(1)
The K4S51163PF is a high-performance dynamic random-access memory device manufactured by Samsung. It features a synchronous design that allows precise cycle control with the use of the system clock, and I/O transactions are possible on every clock cycle. The device's range of operating frequencies, programmable burst lengths, and programmable latencies make it suitable for a variety of high-bandwidth and high-performance memory system applications.
samsung K4S51153LF - Y(P)C/L/F Mobile SDRAM Manual
K4S51153LF is a mobile SDRAM with voltage options of 2.5V/2.5V or 2.5V/1.8V. It is compatible with LVCMOS and multiplexed address. The product has four banks and supports MRS and EMRS cycles with address key programs. It also has special function support including Partial Array Self Refresh and Temperature Compensated Self Refresh. Other features include masking with DQM, auto refresh, and a 64ms refresh period. The product operates in commercial temperature range (-25°C to 70°C) and comes in a 2Chips DDP 54Balls FBGA package.
samsung K4S511633F-Y(P)C/L/F Mobile-SDRAM Manual(1)
K4S511633F-Y(P)C/L/F is a 536,870,912 bit synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technol- ogy. It has range of operating frequencies, programmable burst length and programmable latencies, which make it suitable for a variety of high bandwidth, high performance memory system applications.
samsung K4S511633F-Y(P)C/L/F Mobile-SDRAM Manual(1)(1)
The K4S511633F is a high-performance CMOS dynamic random access memory produced by Samsung. It uses a synchronous design that allows precise timing control and supports a variety of high-bandwidth, high-performance memory system applications. This device has multiple operating frequencies, programmable burst lengths, and programmable latencies, making it suitable for use in a variety of applications.
samsung K4S511633C-YL/N/P CMOS SDRAM Manual(1)
K4S511633C-YL/N/P is a 32Mx16 54CSP 1/CS (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Mobile SDRAM, powered by 3.0V, LVCMOS compatible with multiplexed address, supports four-bank operation, MRS cycle with address key programming.
samsung K4S511633C-YL/N/P CMOS SDRAM Manual
The K4S511633C-YL/N/P is a 3.0V power supply 32Mx16 54CSP 1/CS (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Mobile SDRAM fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control, with four banks operation, MRS cycle with address key programs, burst length, burst type and all inputs sampled at the positive going edge of the system clock.
samsung K4S511632M CMOS SDRAM Manual(1)
The K4S511632M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS technol- ogy.
samsung DV300/DV300F/DV305/DV305F user manual
This user manual contains detailed instructions on how to use the camera. Read this manual carefully before using the camera. This manual contains the following: Frequently Asked Questions, Quick Reference, Table of Contents, Basic Functions, Extended Functions, Shooting Options, Playback/Editing, Wireless Network (DV300F/DV305F), Settings, Appendix.
samsung K4S511632M CMOS SDRAM Manual(1)(1)
This document describes the features and characteristics of K4S511632M CMOS SDRAM, including its capacity, organization, operating frequency range, timing control, and power supply.
samsung SCH-i889 phones Manual
This document is the user manual for SCH-i889, which describes the features and characteristics of this Samsung mobile device, as well as the safety precautions before use.