Samsung manuals, page 34
SAMSUNG ELCTRONICS 1Gb 1.8V NAND Flash Errata
This document is a description of SAMSUNG 11Gb 1.8V NAND Flash Errata. It provides information about the product's features, specifications, etc.
Samsung K9F1G08R0A Data Sheet
This document is the datasheet of K9F1G08U0A K9F1G08R0A K9K2G08U1A NAND Flash Memory. It provides the features and characteristics of the products.
Samsung K9F1G08U0A K9F1G08R0A K9K2G08U1A Data Sheet
This document provides specifications and features of three flash memory products, including K9F1G08U0A, K9F1G08R0A, and K9K2G08U1A. The document includes revision history, technical notes, and descriptions of AC timing characteristics.
samsung 1Gb 1.8V NAND Flash Errata Manual
Some of AC characteristics are not meeting the specification.
samsung K9F1G08Q0A/K9F1G08U0A handbook
This datasheet introduces the features of K9F1G08U0A and K9F1G08Q0A NAND flash memory
samsung K9F1G08Q0M/K9F1G16Q0M/K9F1G08D0M/K9F1G16D0M/K9F1G08U0M/K9F1G16U0M handbook
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Datasheet
samsung K9F1608W0A-TCB0 K9F1608W0A-TIB0 FLASH MEMORY handbook(1)
K9F1608W0A-TCB0, K9F1608W0A-TIB0 FLASH MEMORY is a 2Mx8Bit NAND Flash Memory produced by Samsung Electronics of Korea.
samsung K9F1608W0A-TCB0 K9F1608W0A-TIB0 FLASH MEMORY handbook(1)(1)
2M x 8-bit NAND Flash Memory for solid state mass storage market. The flash has 264-byte page program and 4K-byte block erase function.
samsung K9F1208D0A/K9F1208U0A/K9F1216D0A/K9F1216U0A handbook(2)
This datasheet provides detailed information on 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory, including product parameters, package form, pin diagram, etc.
samsung K9F1208D0A/K9F1208U0A/K9F1216D0A/K9F1216U0A handbook(1)
This document is about the technical information of the 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory produced by SAMSUNG Electronics. The document introduces the specifications and features of the product, and provides revision history and contact information.
samsung K9F1216U0A/K9F1208U0A FLASH MEMORY handbook
K9F1208U0A and K9F1216U0A are 64M x 8 bit and 32M x 16 bit NAND flash memory chips produced by Samsung Electronics, supporting 1.8V and 3.3V power supply.
samsung K9F1208X0C Manual
The document provides technical information and features of three models of Samsung flash memory products: K9F1208R0C, K9F1208U0C, and K9F1208B0C.
samsung K9F1208D0A/K9F1208U0A/K9F1216D0A/K9F1216U0A handbook
samsung K4S643232C CMOS SDRAM handbook
The K4S643232C is a 67,108,864-bit synchronous high-data-rate dynamic random-access memory organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG's high-performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
samsung SDRAM 256Mb E-die (x4 x8 x16) handbook
The K4S560432E / K4S560832E / K4S561632E is a 268,435,456 bit synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth applications.