Samsung manuals, page 35
samsung SDRAM 256Mb E-die (x4 x8 x16) CMOS SDRAM handbook(1)
samsung SDRAM 256Mb E-die (x4 x8 x16) CMOS SDRAM handbook(1)(1)
The document details the Samsung 256Mb E-die SDRAM model, frequency, interface, package, etc.
samsung K4S283233F - F(H)E/N/G/C/L/F February 2004 Mobile-SDRAM Manual
K4S283233F is a synchronous high data rate Dynamic RAM with features such as 3.0V & 3.3V power supply, LVCMOS compatible with multiplexed address, four banks operation, and MRS cycle with address key programs, etc.
Samsung K4S283233F - F(H)E/N/G/C/L/F Data Sheet
The K4S283233F is a 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per- formance memory system applications.
Samsung 8Mx16 SDRAM 54CSP Data Sheet(1)
K4S281633D-RL(N) Rev. 0.6 is a 2001 November released CMOS SDRAM with 8Mx16, 54CSP, VDD/VDDQ 3.0V/3.0V & 3.3V/3.3V
Samsung 8Mx16 SDRAM 54CSP Data Sheet
K4S281633D-RL(N) Rev. 0.6 Nov. 2001 CMOS SDRAM Preliminary 8Mx16 Revision 0.6 November 2001 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V & 3.3V/3.3V)
Samsung 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Data Sheet(1)(1)
K4S281632M is a 2M x 16Bit x 4 Banks Synchronous DRAM produced by Samsung. It has JEDEC standard 3.3V power supply, LVTTL compatibility and four memory operation functions.
Samsung 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Data Sheet(1)
The K4S281632M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programma- ble burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high perfor- mance memory system applications.
Samsung S3C72M5/C72M7/C72M9/P72M9 (Preliminary Spec) Data Sheet(1)(1)
S3C72M5/C72M7/C72M9 is a single-chip CMOS microcontroller from Samsung, using the company's newest 4-bit CPU core, SAM47 (Samsung Arrangeable Microcontrollers). It offers high performance and low power consumption. The S3C72M5/C72M7/C72M9 features a 80 SEG × 16 COM, 88 SEG × 8 COM LCD display controller/driver, as well as 3,584 × 4-bit RAM, 16,384/24,576/32,768 × 8-bit ROM, 51 I/O pins and 9 vectored interrupts.
Samsung S3C72M5/C72M7/C72M9/P72M9 (Preliminary Spec) Data Sheet(1)
S3C72M5/C72M7/C72M9/P72M9 is a single-chip CMOS microcontroller from Samsung Electronics. It features the latest Samsung SAM47 (Samsung Arrangeable Microcontrollers) CPU core, high performance and high integration. This series of products has up to 1280 dot LCD direct drive capability, segment expansion circuit, 8-bit and 16-bit timer/counter, and serial I/O, which is suitable for various applications that require LCD functions.
Samsung S3C7281 Data Sheet
Samsung K4S280832B Data Sheet (1)(1)
K4S280832B is a CMOS SDRAM produced by Samsung Electronics. This datasheet introduces the pin definition, function description, working principle and other information of this product.
Samsung K4S280832B Data Sheet (1)
SAMSUNG K4S280832A handbook
K4S280832A is a 128Mbit Synchronous High Data Rate Dynamic Random Access Memory (SDRAM) organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance mem- ory system applications.
SAMSUNG K4S280832A datasheet
K4S280832A is a 128Mbit SDRAM from Samsung, organized as 4 x 4,194,304 words by 8 bits. It is manufactured using SAMSUNG's high performance CMOS technology. This device supports multiple operating frequencies, programmable burst length and programmable latency, and can be used in a variety of high bandwidth, high performance memory system applications.