STP3HNK90Z - STF3HNK90Z is an N-channel SuperMESH™ Power MOSFET with a working voltage of 900V, a typical on-resistance of 3.5Ω, and a rated current of 3A. The product has extremely high dv/dt capability, is 100% avalanche tested, minimizes gate charge, and has very low intrinsic capacitances with excellent manufacturing repeatability.
This document provides technical specifications for the STP3HNK90Z (TO-220) and STF3HNK90Z (TO-220FP) N-channel Super MESH Power MOSFETs. These devices are designed with a Zener-protected gate-source structure to enhance ESD capability and safely absorb voltage transients, making them ideal for high current, high speed switching applications such as off-line power supplies and PFC circuits.
The datasheet details absolute maximum ratings, electrical characteristics including on-resistance and capacitance values, avalanche performance, and thermal data. It also includes safe operating area graphs, typical application circuit diagrams, and mechanical dimensions for both TO-220 and TO-220FP packages.
| Package Type | TO-220 / TO-220FP |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 3 A |
| Total Dissipation (To = 25°C) | 90 W / 25 W |
| Static Drain-source On Resistance (Typical) | 3.5 Ohms |
The integrated back-to-back Zener diodes enhance ESD capability and allow the device to safely absorb possible voltage transients applied from gate to source.
The device supports a continuous drain current of 3 A when the case temperature is maintained at 25°C.
The STP3HNK90Z model has a maximum total dissipation of 90 W, while the STF3HNK90Z model is limited to 25 W.