The STP8NK85Z is an N-channel MOSFET produced by ST. Its features are a typical Rds(on) of 1.1 ohms, extremely high dv/dt capability, improved ESD capability, 100% avalanche rating, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.
This document provides technical specifications for the STP8NK85Z and STF8NK85Z N-Channel SuperMESH™ MOSFETs. These devices are designed for high current, high speed switching applications, particularly in off-line power supplies and SMPS. The series features an optimized strip-based PowerMESH™ layout to minimize on-resistance and ensure high dv/dt capability.
| Operating Junction Temperature | -55 to 150 °C |
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They are ideal for high current, high speed switching, off-line power supplies, and SMPS.
They enhance ESD capability and safely absorb voltage transients applied from gate to source.
Yes, ST offers these devices in ECOPACK® packages with a Lead-free second level interconnect.