STMicroelectronics STP5NK90Z/STF5NK90Z Datasheet

This document describes the features and characteristics of STP5NK90Z and STF5NK90Z N-CHANNEL 900V - 2Ω - 4.5A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFET, including extremely high dv/dt capability, improved ESD capability, 100% avalanche rated, and minimized gate charge.


STMicroelectronics STP5NK90Z/STF5NK90Z Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
266 KB
Published
07 August, 2012
Updated
29 September, 2023
MD5 checksum
7289C022EF2430C1CEBC76A2AAEB01F0

About this manual

This document describes the STP5NK90Z and STF5NK90Z, which are Zener-Protected SuperMESH™ MOSFETs available in TO-220 and TO-220FP packages. These devices feature extremely high dv/dt capability and improved ESD protection, making them ideal for high current, high speed switching applications such as off-line power supplies and PFC circuits.

The datasheet provides comprehensive electrical characteristics including absolute maximum ratings, thermal data, avalanche characteristics, and dynamic parameters like gate charge and capacitance. It also includes safe operating area graphs and test circuit diagrams for switching times.

What's inside

  • General Features
  • Absolute Maximum Ratings
  • Thermal Data
  • Electrical Characteristics
  • Safe Operating Area
  • Gate-Source Zener Diode

Specifications

Total Dissipation (TO-220FP)30 W
Operating Junction Temperature-55 to 150 °C

Frequently asked questions

What is the primary application for these MOSFETs?

They are ideal for off-line power supplies, adaptors and PFC.

What is the maximum continuous drain current for these MOSFETs at a case temperature of 25°C?

The maximum continuous drain current is 4.5 A when the case temperature (Tc) is 25°C.

What are the maximum operating junction and storage temperatures for this device?

The device can operate with a junction temperature between -55°C and 150°C, and it can be stored within the same range.

What is the maximum single pulse avalanche energy for this MOSFET?

The device can handle a maximum single pulse avalanche energy of 230 mJ.

Download PDF (266 KB)

More STMicroelectronics Manuals


View all STMicroelectronics manuals →