This document is about the STF724 and STN724 PNP Medium Power Transistors. They are manufactured using planar technology, resulting in rugged high performance devices. This document details the products features, characteristics, applications, packaging, component marking, polarity, absolute maximum ratings, temperature characteristics, electrical characteristics etc.
The document describes the STF724 and STN724 as NPN medium power transistors available in SOT-89 and SOT-223 surface mount packages. These devices are designed for applications such as voltage regulation, relay driving, and generic switching.
Key specifications include a collector-emitter breakdown voltage of 30V, a maximum collector current of 3A, and operation up to a junction temperature of 150°C. The datasheet details electrical characteristics like DC current gain and saturation voltages, along with thermal resistance data for both package types.
| Collector-Emitter Voltage (Vceo) | 30 V |
|---|---|
| Collector Current (Io) | 3 A |
| Base Current (Ip) | 1 A |
| Total Dissipation (Prot) SOT-89 | 1.4 W |
| Max Operating Junction Temperature (Tj) | 150 °C |
| DC Current Gain (hFE) Min | 80 @ Io=1A |
The maximum continuous collector current is 3 A.
They can dissipate a maximum of 1.4 W or 1.6 W depending on the package.