This document is the datasheet of IXFK 26N60Q IX N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Power MOSFETs. Its main features include low gate charge, international standard packages, epoxy meet UL 94 V-0, flammability classification, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure, avalanche energy and current rated, fast intrinsic Rectifier etc.