Fairchild Manuals - Page 11

Fairchild manuals, page 11

• FAIRCHILD 74F00 handbook(1)

  This document introduces the 74F00 Quad 2-Input NAND Gate from Fairchild Semiconductor Corporation, which contains four independent gates, each of which performs the logic NAND function.

• FAIRCHILD 74F00 handbook

  This document describes a device with four independent gates, each of which performs the logic NAND function.

• FAIRCHILD FDPF44N25 handbook

  This document describes the features of the FDPF44N25 UniFET TM N-Channel MOSFET. The product has a voltage rating of 250V, current rating of 18A, on-state resistance of 0.069Ω, low gate charge, and low Crss. It is suitable for high-efficiency switched mode power supplies and active power factor correction.

• FAIRCHILD FDP8896 N-Channel PowerTrench MOSFET 30V 92A 5.9m handbook

  FDP8896 is a N-Channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation with a maximum voltage of 30V, maximum current of 92A and a ON resistance of 5.9mΩ. It is suitable for DC/DC converters.

• FAIRCHILD FDP8880 FDB8880 N-Channel PowerTrench MOSFET 30V 54A 11.6m handbook

  FDD8880 is an N-Channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation. It has a feature of rDS(ON) = 11.6mΩ, VGS = 10V, ID = 40A, and can be used for DC/DC converters.

• FAIRCHILD FDP8874 N-Channel PowerTrench MOSFET 30V 114A 5.3m handbook

  The FDP8874 is a N-channel MOSFET from Fairchild Semiconductor Corporation. It has a rated voltage of 30V and a maximum current of 114A. The typical on-resistance is 5.3mΩ. The device is manufactured using Trench technology and has low gate charge and high switching speed.

• FAIRCHILD FDP8870 N-Channel PowerTrench MOSFET 30V 156A 4.1m handbook

  FDP8870 is a N-Channel MOSFET manufactured by Fairchild Semiconductor Corporation. It has a rated voltage of 30V and a rated current of 156A. Its features are low on-resistance (4.1mΩ) and fast switching speed.

• FAIRCHILD FDP8030L/FDB8030L N-Channel Logic Level PowerTrench MOSFET handbook

  This document describes an N-Channel Logic level power MOSFET specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications, making them easier and safer to drive (even at very high frequencies), and enabling DC/DC power supply designs with higher overall efficiency.

• FAIRCHILD FDP75N08 75V N-Channel MOSFET handbook

  This document describes the features and characteristics of the FDP75N08 75V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 75A current, 0.011Ω RDS(on), low gate charge, and low Crss.

• FAIRCHILD FDP7045L/FDB7045L handbook

  This document is about the parameters of two MOSFET models FDP7045L and FDB7045L

• FAIRCHILD FDP7042L FDB7042L N-Channel Logic Level PowerTrench MOSFET handbook

• FAIRCHILD FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench MOSFET handbook

  FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench MOSFET is a low RDS(ON), low gate charge, high switching speed N-channel logic level MOSFET produced by Fairchild Semiconductor Corporation. It adopts TO-220 FDP series and TO-263AB FDB series package.

• FAIRCHILD FDP7030L FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor handbook

  FDP7030L and FDB7030L are Fairchild's high density DMOS N-Channel logic level enhancement mode power field effect transistors. These devices are particularly suited for low voltage applications such as DC/DC converters and switch mode power supplies.

• FAIRCHILD FDP6670S/FDB6670S handbook

  FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET™ is a 30V MOSFET designed by Fairchild Semiconductor Corporation with low RDS(ON) and low gate charge, suitable for synchronous DC:DC power supplies as a low-side switch.

• FAIRCHILD FDP6676S FDB6676S handbook

  This document is the datasheet of FDP6676S/FDB6676S, which introduces the features of the product, including product model, package, pin, typical application circuit, characteristic parameters, etc.

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