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The NZT560/NZT560A is an NPN low saturation transistor with high current gain and low saturation voltage, capable of continuous collector currents up to 3A.
The MPS751 is a silicon PNP transistor manufactured by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is -60V, maximum collector current is 2A, and maximum collector dissipation is 625mW. Its package is SOT-223.
This document describes four general purpose amplifiers that can be used in switches with collector currents of 10 µA to 100 mA. These devices are best used when space is the primary consideration. Sourced from Process 23 & 66. See 2N3904 (NPN) & 2N3906 (PNP) for characteristics.
This document provides information on the parameters and characteristics of the MMPQ2907 model, including voltage, current, temperature range, etc. This device is designed for general purpose amplifiers and switches requiring collector currents up to 500mA.
MMPQ2222 is a transistor produced by Fairchild Semiconductor Corporation. Its maximum current is 500mA, its maximum collector-emitter voltage is 30V, its maximum collector-base voltage is 60V, and its maximum emitter-base voltage is 5.0V.
This document describes the features and characteristics of the 2N5962/MMBT5962, a discrete POWER & Signal Technologies NPN General Purpose Amplifier. It is designed for low noise, high gain, general purpose amplifiers that require collector currents up to 50mA. The device has an operating and storage junction temperature range of -55 to +150 degrees Celsius.
This document describes the features and characteristics of the 2N5771 and MMBT5771 PNP switching transistors, designed for very high-speed saturated switching with a maximum collector current of 100mA.
This document describes the features and characteristics of the MMBT5550 NPN general purpose amplifier, which is designed for high voltage amplifiers and gas discharge display drivers.
The MMBT5401 is a NPN type transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is -150V, maximum collector-base voltage is -160V, maximum emitter-base voltage is -5.0V, and maximum collector current is -600mA. The operating temperature range is -55~150℃.
This document provides information about the absolute maximum ratings and electrical characteristics of Fairchild Semiconductor Corporation's 2N5086/2N5087/MMBT5087 products. It includes various limiting values for voltage, current, and temperature, as well as characteristics related to switching and amplification.
2N4400 / MMBT4400 is a NPN general purpose amplifier designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA.