Fairchild Manuals

MMBT2222AT is a NPN epitaxial silicon transistor produced by Fairchild Semiconductor Corporation. It is a general purpose amplifier transistor and is suitable for all types of ultra-small surface mount packages. It can also be used for general switching and amplification applications.

KST92/KST93 is a PNP type transistor produced by FAIRCHILD, which has high voltage, high current, wide SOA characteristics.

KST5551 is a NPN type silicon transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 160V, maximum collector current is 600mA, and maximum power dissipation is 350mW.

This document provides the absolute maximum ratings and electrical characteristics of the KST5550 NPN epitaxial silicon transistor introduced by Fairchild Semiconductor Corporation in 2002. The transistor features high voltage capability and high DC current gain.

KST55/56 is a PNP transistor produced by Fairchild. Its maximum collector-emitter voltage is -60V/-80V, maximum collector-emitter saturation voltage is -60V/-80V, maximum collector current is -500mA, maximum collector power dissipation is 350mW, and maximum operating temperature is 150℃. Its package form is SOT-23.

The KST5401 is a PNP type high voltage transistor produced by Fairchild Semiconductor Corporation. It has a maximum collector-base voltage of -160V, a maximum collector-emitter voltage of -150V, a maximum emitter-base voltage of -5V, a maximum collector current of -500mA and a maximum collector power dissipation of 350mW. It can operate at a storage temperature of 150℃.

This manual provides the characteristics and usage information for the KST5086/5087 low noise PNP transistors.

This document provides the absolute maximum ratings and electrical characteristics of the KST4403 PNP epitaxial silicon transistor. It includes information on its operating voltages, currents, power dissipation, and temperature range. Additionally, it provides details on its basic parameters such as collector-base breakdown voltage, collector-emitter breakdown voltage, emitter-base breakdown voltage, base cutoff current, collector cutoff current, DC current gain, saturation voltage, current gain bandwidth product, output capacitance, and turn-on/off times.

KST4401 is a NPN type transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 40V, maximum collector-base voltage is 60V, maximum emitter-base voltage is 6V, maximum collector current is 600mA, maximum collector power dissipation is 350mW, and storage temperature is 150℃.

KST3906 is a PNP type silicon transistor produced by Fairchild company, its maximum collector-base voltage is -40V, maximum collector-emitter voltage is -40V, maximum emitter-base voltage is -5V, maximum collector current is -200mA, maximum collector power dissipation is 350mW, maximum storage temperature is 150 ℃.

This document describes the features and characteristics of the KST3904 NPN Epitaxial Silicon Transistor.

KST2907A is a PNP type NPN transistor manufactured by Fairchild Semiconductor Corporation. Its maximum current is -600mA, maximum power is 350mW, and working temperature range is -55~150℃.

The KST2222A is a NPN type transistor, with a maximum collector-emitter voltage of 40V, a maximum collector-emitter reverse voltage of 75V, a maximum emitter-base voltage of 6V, a maximum collector current of 600mA, and a maximum collector power dissipation of 350mW.

KST05/06 is an NPN type silicon transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 60V, maximum collector-emitter saturation voltage is 0.25V, maximum emitter-base voltage is 4V, maximum collector current is 500mA, and maximum power consumption is 350mW. The package type is SOT-23.