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FJV42 is a NPN high voltage transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 350V, maximum collector-emitter current is 500mA, maximum collector-base current is 100uA, maximum emitter-base voltage is 6V, and maximum collector power dissipation is 350mW.
This document describes the absolute maximum ratings and electrical characteristics of the FJV1845 NPN epitaxial silicon transistor. The transistor has a collector-base voltage and collector-emitter voltage of up to 120V, and a maximum collector current of 50mA. Additionally, the transistor features high gain and low saturation voltage.
FJT44 is a high voltage NPN type transistor. Its features are: 1. Collector-Emitter voltage range is 400V. 2. Collector-Emitter current range is 300mA. 3. Working temperature range is -55 to +150°C.
FJMA790 is a PNP epitaxial silicon transistor for load management in portable applications. It features high collector current and low collector-emitter saturation voltage.
This document describes the features and characteristics of the MMBT3906SL PNP epitaxial silicon transistor, which is suitable for general amplification and switching applications, especially for portable devices. It is recommended to use it in conjunction with the complementary NPN model MMBT3904SL.
The MMBT3904T is an NPN type transistor produced by Fairchild Semiconductor Corporation. It is suitable for general amplification, switching and amplification applications.
The MMBT3904SL is a NPN type transistor produced by Fairchild Semiconductor Corporation. It is suitable for general switching and amplification and has a maximum package height of 0.43mm. It can be used as a complementary type of PNP MMBT3906SL
The MMBT3646 is a bipolar junction transistor manufactured by Fairchild Semiconductor. The transistor has a VCEO of 15 V, a VCES of 40 V, a VCBO of 40 V, and a VEBO of 5 V. It can withstand a maximum current of 300 mA and a maximum power of 625 mW. The transistor's rated operating temperature is 150°C.
MMBT2369 / PN2369 is a NPN switching transistor produced by Fairchild Semiconductor Corporation. The feature of this transistor is that it can achieve high speed saturated switching at collector currents of 10mA to 100mA.
