Technical specifications and performance graphs for the Panasonic 2SC2377 silicon NPN epitaxial planar transistor.
The 2SC2377 is a silicon NPN epitaxial planar transistor optimized for high‑frequency RF amplification in FM/AM radios. It features a high transition frequency, low noise figure, and a convenient M‑type package for easy insertion.
The document provides absolute maximum ratings, detailed electrical characteristics, and a series of performance graphs covering parameters such as transition frequency, noise figure, power gain, and capacitances. Export and usage precautions are also included.
| Collector‑base voltage (V CBO) | 30 V |
|---|---|
| Collector‑emitter voltage (V CEO) | 20 V |
| Emitter‑base voltage (V EBO) | 3 V |
| Collector current (I C) | 15 mA |
| Collector power dissipation (P C) | 200 mW |
| Junction temperature (T j) | 150 °C |
| Storage temperature (T stg) | -55 to +150 °C |
The maximum ratings are: V CBO 30 V, V CEO 20 V, V EBO 3 V, I C 15 mA, P C 200 mW, T j 150 °C, and storage temperature from –55 °C to +150 °C.