230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
The NXP BLF8G20LS-230V is a 230 W LDMOS power transistor designed for base station applications operating in the 1800 MHz to 2000 MHz frequency range. It features improved video bandwidth and is optimized for broadband operation with low memory effects, making it suitable for Doherty applications and excellent pre-distortability.
The device is available in a ceramic package with a flange for heat dissipation. Key specifications include a drain-source breakdown voltage of 65 V, a maximum junction temperature of 225 °C, and a typical power gain of 16.8 dB at 55 W output. The transistor is compliant with RoHS Directive 2002/95/EC.
| Power | 230 W |
|---|---|
| Frequency range | 1800 MHz to 2000 MHz |
| Video bandwidth | 65 MHz |
The transistor is designed for base station applications at frequencies from 1800 MHz to 2000 MHz.
Yes, the product is compliant to Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS).