Transistor Manuals - Page 2

Transistor manuals, page 2

• CET CEH2310 Transistor

  FEATURES 30V, 6.2A , RDS(ON) = 33mW @VGS = 10V. RDS(ON) = 38mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead-free plating; RoHS compliant.

• CET CEH2305 Transistor

  FEATURES -30V, -4.9A , RDS(ON) = 52mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. RDS(ON) = 119mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead free product is acquired.

• CET CEG8208 Transistor

  FEATURES 20V, 6.2A, RDS(ON) = 22mW @VGS = 4.5V. RDS(ON) = 32mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. ESD Protected: HBM 2000 V

• CET CEG8205A Transistor

  FEATURES 20V, 6.2A, RDS(ON) = 24mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package.

• CET CEC8218 Transistor

  FEATURES 20V, 6.5A, RDS(ON) = 23mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

• CET CEA6200 Transistor

  FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.

• CET CEA6861 Transistor

  FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.

• CET CEA3252 Transistor

  FEATURES 30V, 5A, RDS(ON) = 32mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package.

• CET CEA6426 Transistor

  FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.

• Comchip 2N3906-G Transistor

  Features -PNP silicon epitaxial planar transistor for switching and amplifier application. -As complementary type, the NPN transistor 2N3904-G is recommended. -This transistor is available in the SOT-23 case with the type designation MMBT3906-G.

• Comchip 2SC5658-HF Transistor

  Features -Low Cob. Mechanical data -Case: SOT-723, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026.

• Mitsubishi M54513P/FP Transistor Array Datasheet

  Datasheet 3 pages · 62 KB · EN

  The Mitsubishi M54513P/FP is an 8‑unit 50 mA NPN transistor array with 40 V breakdown voltage and a wide temperature range, detailed in this datasheet.

• MITSUBISHI M63802P/FP/GP/KP Manual

  Datasheet 4 pages · 56 KB · EN

  The Mitsubishi M63802 series transistor array datasheet details specifications, operating conditions, and characteristics for the P, FP, GP, and KP variants.

• Mitsubishi Semiconductor M63803P/FP/GP/KP 7-Unit 300mA Transistor Array Datasheet

  Datasheet 4 pages · 56 KB · EN

  Datasheet for Mitsubishi Semiconductor M63803P/FP/GP/KP 7‑unit 300 mA transistor array with specs, ratings and typical characteristics.

• Mitsubishi M63824GP/KP Datasheet

  Datasheet 4 pages · 40 KB · EN

  The Mitsubishi M63824GP/KP datasheet provides specifications and characteristics of a 7‑unit 500 mA Darlington transistor array with clamp diode.

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