NXP BLF25M612/BLF25M612G Power LDMOS Transistor Datasheet

12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package.


NXP BLF25M612/BLF25M612G Power LDMOS Transistor Datasheet - cover page
Brand
NXP
Category
Transistor
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
201 KB
Published
20 May, 2014
Updated
25 September, 2023
MD5 checksum
DBF2D6F8CA34EFD179339E87D3816A86

About this manual

The document describes the NXP BLF25M612 and BLF25M612G, which are 12 W LDMOS power transistors designed for Industrial, Scientific, and Medical (ISM) applications operating at frequencies from 2400 MHz to 2500 MHz. These drivers are intended for high power CW applications and feature a high-performance ceramic package with integrated ESD protection.

What's inside

  • Product profile
  • Pinning information
  • Ordering information
  • Limiting values
  • Thermal characteristics
  • DC characteristics
  • RF characteristics
  • Package outline

Specifications

Power12 W
Frequency range2400 MHz to 2500 MHz
Storage temperature range-65 to +150 °C
Typical Drain Efficiency60 %

Frequently asked questions

What are the typical applications for these transistors?

They are designed for Industrial, Scientific and Medical (ISM) applications in the frequency range of 2400 MHz to 2500 MHz.

Are these transistors RoHS compliant?

Yes, they are compliant to Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS).

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