Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP
The NXP PSMN3R0-30YLD is a logic level gate drive N-channel enhancement mode MOSFET housed in an LFPAK56 package. It utilizes NXP's unique NextPowerS3 technology, which delivers high efficiency and low spiking performance typically associated with integrated Schottky diodes, but without the problematic high leakage current. This device is particularly suited for high efficiency applications operating at high switching frequencies.
| Drain-source voltage | 30 V |
|---|---|
| Total power dissipation | 91 W |
| Package type | LFPAK56 |
| Technology | NextPowerS3 |
| On-state resistance (Typ) | 3.1 mΩ |